ECH8668-TL-H ON Semiconductor, ECH8668-TL-H Datasheet - Page 6

• Manufacturer Part Number: ECH8668-TL-H
• Description: MOSFET N/P-CH 20V 7.5A ECH8
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of ECH8668-TL-H

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.5A, 5A
• Vgs(th) (max) @ Id: -
• Gate Charge (qg) @ Vgs: 10.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1060pF @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SMD
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
1.8
1.6
1.5
1.4
1.3
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0
0
Note on usage : Since the ECH8668 is a MOSFET product, please avoid using this device in the vicinity
This catalog provides information as of October, 2009. Specifi cations and information herein are subject
to change without notice.
V DS = --10V
I D = --5A
1
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20
2
Ambient Temperature, Ta -- °C
40
Total Gate Charge, Qg -- nC
3
When mounted on ceramic substrate
(900mm
4
of highly charged objects.
60
V GS -- Qg
P D -- Ta
5
80
2
×0.8mm)
6
100
7
8
120
9
[Nch/Pch]
140
IT13081
IT13083
10
[Pch]
160
11
ECH8668
--0.01
--100
--1.0
--0.1
--10
--0.01
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
Ta=25° C
Single pulse
When mounted on ceramic substrate
(900mm
2 3
Operation in this
area is limited by R DS (on).
2
×0.8mm)
5 7
Drain-to-Source Voltage, V DS -- V
--0.1
2
3
A S O
5 7
--1.0
2
3
5 7
PS
PW≤10μs
--10
No. A1510-6/6
2 3
IT13082
[Pch]
5