ECH8668-TL-H ON Semiconductor, ECH8668-TL-H Datasheet - Page 3

• Manufacturer Part Number: ECH8668-TL-H
• Description: MOSFET N/P-CH 20V 7.5A ECH8
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of ECH8668-TL-H

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.5A, 5A
• Vgs(th) (max) @ Id: -
• Gate Charge (qg) @ Vgs: 10.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1060pF @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SMD
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Package Dimensions
unit : mm (typ)
7011A-001
Switching Time Test Circuit
[N-channel]
P.G
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
4V
0V
PW=10μs
D.C.≤1%
0
0
V IN
1
8
0.65
Bot t om View
Top View
V IN
0.1
Drain-to-Source Voltage, V DS -- V
2.9
G
50Ω
5
4
I D -- V DS
0.3
0.2
V DD =10V
D
S
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
0.15
I D =4A
R L =2.5Ω
ECH8668
0.3
V OUT
0 t o 0.02
V GS =1.5V
0.4
IT12483
[Nch]
0.5
ECH8668
[P-channel]
Electrical Connection
P.G
--4V
0V
PW=10μs
D.C.≤1%
10
1
8
9
8
7
6
5
4
3
2
1
0
0
V IN
7
2
V IN
0.5
Gate-to-Source Voltage, V GS -- V
50Ω
G
6
3
V DD = --10V
I D -- V GS
1.0
D
4
5
S
I D = --3A
R L =3.33Ω
ECH8668
1.5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Top view
V OUT
2.0
No. A1510-3/6
V DS =10V
IT12484
[Nch]
2.5