ECH8667-TL-H ON Semiconductor, ECH8667-TL-H Datasheet - Page 2

• Manufacturer Part Number: ECH8667-TL-H
• Description: MOSFET P-CH DUAL 30V 5.5A ECH8
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of ECH8667-TL-H

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 39 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: -
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SMD
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
--10V
P.G
0
0V
0
PW=10μs
D.C.≤1%
V IN
--0.1 --0.2
Parameter
Drain-to-Source Voltage, V DS -- V
V IN
--0.3
50Ω
G
--0.4
I D -- V DS
V DD = --15V
--0.5
D
S
--0.6
I D = --2.5A
R L =6Ω
ECH8667
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
Symbol
--0.7
V OUT
--0.8
--0.9
I D =- -1mA, V GS =0V
V DS =- -30V, V GS =0V
V GS =±16V, V DS =0V
V DS =- -10V, I D =- -1mA
V DS =- -10V, I D =- -2.5A
I D =- -2.5A, V GS =--10V
I D =- -1.5A, V GS =- -4.5V
I D =- -1.5A, V GS =- -4V
V DS =--10V, f=1MHz
V DS =--10V, f=1MHz
V DS =--10V, f=1MHz
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
V DS =--15V, V GS =--10V, I D =--5.5A
V DS =--15V, V GS =--10V, I D =--5.5A
V DS =--15V, V GS =--10V, I D =--5.5A
I S =--5.5A, V GS =0V
IT14855
--1.0
ECH8667
Conditions
--9
--8
--7
--6
--5
--4
--3
--2
--1
0
0
V DS = --10V
--0.5
Gate-to-Source Voltage, V GS -- V
--1.0
min
--1.5
--1.2
I D -- V GS
--30
--2.0
Ratings
typ
--0.82
600
145
110
5.2
7.2
1.8
3.2
--2.5
23
63
42
13
30
55
58
--3.0
max
--2.6
--1.2
±10
--1
39
77
82
No. A1778-2/4
--3.5
IT14856
Unit
mΩ
mΩ
mΩ
μA
μA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
V
V
V
--4.0