ECH8667-TL-H ON Semiconductor, ECH8667-TL-H Datasheet
ECH8667-TL-H
Specifications of ECH8667-TL-H
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ECH8667-TL-H Summary of contents
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... Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8 Bottom View ECH8667 SANYO Semiconductors P-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol Conditions V DSS V GSS PW≤10μs, duty cycle≤ When mounted on ceramic substrate (900mm P T When mounted on ceramic substrate (900mm ...
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... P.G 50Ω --3.0 --2.5 --2.0 --1.5 --1.0 --0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 Drain-to-Source Voltage ECH8667 Symbol Conditions -1mA =0V V (BR)DSS -30V =0V I DSS I GSS V GS =±16V = -10V -1mA V GS (off -10V -2.5A | yfs | -2.5A =--10V R DS (on -1.5A -4. (on -1.5A - (on)3 ...
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... Drain Current Time -- I D 100 --0.1 --1.0 Drain Current -- --10V -- --6A --8 --7 --6 --5 --4 --3 --2 -- Total Gate Charge ECH8667 100 Ta=25° --12 --14 --16 --60 --40 --20 IT15727 --10V -- --1 --0 --0. --0.001 --0.2 IT14859 2 1000 100 --15V --10V --10 IT14861 --100 --40A ( PW≤ ...
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... Ambient Temperature °C Note on usage : Since the ECH8667 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any " ...