ECH8664R-TL-H ON Semiconductor, ECH8664R-TL-H Datasheet - Page 4

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ECH8664R-TL-H

Manufacturer Part Number
ECH8664R-TL-H
Description
MOSFET N-CH DUAL 30V 7A ECH8
Manufacturer
ON Semiconductor
Series
-r
Datasheet

Specifications of ECH8664R-TL-H

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
23.5 mOhm @ 3.5A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
-
Gate Charge (qg) @ Vgs
10nC @ 4.5V
Input Capacitance (ciss) @ Vds
-
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
8-SMD
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ECH8664R-TL-H
Manufacturer:
ON Semiconductor
Quantity:
2 300
0.01
100
1.0
0.1
10
0.01
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
Note on usage : Since the ECH8664R is a MOSFET product, please avoid using this device in the vicinity
Ta=25 °C
Single pulse
When mounted on ceramic substrate
(900mm
This catalog provides information as of July, 2008. Specifications and information herein are subject
to change without notice.
2 3
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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above.
Operation in this
area is limited by R DS (on).
2
✕0.8mm) 1unit
5 7
Drain-to-Source Voltage, V DS -- V
0.1
of highly charged objects.
2
3
A S O
5 7
1.0
2
3
5 7
10
PW ≤10μs
2
IT13808
3
ECH8664R
5
1.6
1.4
1.3
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
Ambient Temperature, Ta -- °C
40
When mounted on ceramic substrate
(900mm
60
P D -- Ta
80
2
✕0.8mm)
100
120
PS
No. A1185-4/4
140
IT13799
160

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