ECH8664R-TL-H ON Semiconductor, ECH8664R-TL-H Datasheet

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ECH8664R-TL-H

Manufacturer Part Number
ECH8664R-TL-H
Description
MOSFET N-CH DUAL 30V 7A ECH8
Manufacturer
ON Semiconductor
Series
-r
Datasheet

Specifications of ECH8664R-TL-H

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
23.5 mOhm @ 3.5A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
-
Gate Charge (qg) @ Vgs
10nC @ 4.5V
Input Capacitance (ciss) @ Vds
-
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
8-SMD
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ECH8664R-TL-H
Manufacturer:
ON Semiconductor
Quantity:
2 300
Ordering number : ENA1185
ECH8664R
Features
Specifications
Absolute Maximum Ratings at Ta=25°C
Electrical Characteristics at Ta=25°C
Marking : TK
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Low ON-resistance.
Built-in gate protection resistor.
2.5V drive.
Best suited for LiB charging and discharging switch.
Common-drain type.
Halogen free compliance.
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer ' s products or
equipment.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
V (BR)DSS
V GS (off)
Symbol
Symbol
V GSS
V DSS
⏐ yfs ⏐
I DSS
I GSS
Tstg
I DP
Tch
P D
P T
I D
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
When mounted on ceramic substrate (900mm
I D =1mA, V GS =0V
V DS =30V, V GS =0V
V GS =±8V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =3.5A
ECH8664R
Conditions
Conditions
2
2
0.8mm) 1unit
0.8mm)
DATA SHEET
72308PE TI IM TC-00001451
min
0.5
4.5
30
Ratings
typ
Ratings
7.5
Continued on next page.
--55 to +150
max
±12
150
±10
1.3
1.4
1.3
30
60
No. A1185-1/4
7
1
Unit
Unit
μA
μA
°C
°C
W
W
V
V
A
A
V
V
S

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ECH8664R-TL-H Summary of contents

Page 1

... To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN ECH8664R SANYO Semiconductors N-Channel Silicon MOSFET General-Purpose Switching Device ...

Page 2

... Switching Time Test Circuit V DD =15V =3. =4.3Ω D PW=10μs D.C.≤ ECH8664R P.G 50Ω =1kΩ ECH8664R Symbol Conditions R DS (on =3.5A =4. (on =3.5A =4. (on =2A =3. (on =2A =2. (on) See specified Test Circuit See specified Test Circuit (off) See specified Test Circuit See specified Test Circuit. ...

Page 3

... Drain-to-Source Voltage (on =2. Gate-to-Source Voltage ⏐ fs⏐ =10V 1 0.1 1.0 Drain Current Time -- 1000 100 0.01 0.1 1.0 Drain Current ECH8664R 0.4 0.5 IT13807 50 Ta=25 ° -60 --40 IT13618 = 0.001 0.1 0 IT13620 4 =10V V DS =10V 4 =7A 4.0 3 ...

Page 4

... Drain-to-Source Voltage Note on usage : Since the ECH8664R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...

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