EMH2409-TL-H ON Semiconductor, EMH2409-TL-H Datasheet - Page 3

• Manufacturer Part Number: EMH2409-TL-H
• Description: MOSFET N-CH DUAL 30V 4A EMH8
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of EMH2409-TL-H

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 59 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: -
• Gate Charge (qg) @ Vgs: 4.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 240pF @ 10V
• Power - Max: 1.2W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

240
200
160
120
1.0
0.1
1.0
10
80
40
10
0.01
7
5
3
2
7
5
3
2
0
5
3
2
7
5
3
2
9
8
7
6
5
4
3
2
1
0
0.1
0
0
V DS =15V
I D =4A
V DD =15V
V GS =10V
I D =1A
0.5
2
2
2
3
Gate-to-Source Voltage, V GS -- V
1.0
3
5 7
4
Total Gate Charge, Qg -- nC
2A
R DS (on) -- V GS
Drain Current, I D -- A
Drain Current, I D -- A
1.5
SW Time -- I D
0.1
5
V GS -- Qg
|
6
y
7
fs | -- I D
2.0
2
1.0
8
3
2.5
5 7
10
2
3.0
1.0
3
12
t d (on)
3.5
2
V DS =10V
Ta=25°C
5
14
3
4.0
IT14214
IT14216
IT16223
IT16151
7
5 7
EMH2409
4.5
10
16
0.01
0.01
100
100
200
160
120
1.0
0.1
1.0
0.1
10
10
80
40
0
--60 --40 --20
7
5
3
2
7
5
3
2
7
5
3
2
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0.2
0.1
0
Ta=25° C
Single pulse
When mounted on ceramic substrate (900mm
Operation in this
area is limited by R DS (on).
2
3
5
0.4
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
Diode Forward Voltage, V SD -- V
Ambient Temperature, Ta -- ° C
5 7
0
1.0
10
R DS (on) -- Ta
20
I S -- V SD
0.6
2
A S O
40
15
3
60
5 7
0.8
80
10
20
2
×0.8mm)
100
No. A1890-3/4
2
1.0
120
25
3
V GS =0V
f=1MHz
140
IT14215
IT14217
IT16152
IT14213
5 7
160
100
1.2
30