EMH2409-TL-H ON Semiconductor, EMH2409-TL-H Datasheet
EMH2409-TL-H
Specifications of EMH2409-TL-H
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EMH2409-TL-H Summary of contents
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... Ordering number : ENA1890 EMH2409 Features The EMH2409 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, • thereby enabling high-density mounting 4V drive • Halogen free compliance • Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage ...
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... 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0 0.1 0.2 0.3 0.4 0.5 0.6 Drain-to-Source Voltage EMH2409 Symbol Conditions V (BR)DSS I D =1mA =0V I DSS V DS =30V =0V I GSS V GS =±16V = (off =10V =1mA | yfs | V DS =10V = (on =2A =10V R DS (on =1A =4. (on =1A =4V ...
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... Gate-to-Source Voltage 1 0 0.01 0.1 1.0 Drain Current Time -- =15V =10V 1 0.1 1.0 Drain Current =15V = 0.5 1.0 1.5 2.0 2.5 3.0 Total Gate Charge EMH2409 200 Ta=25°C 160 120 --60 --40 --20 IT16223 =10V 0.2 IT14214 100 (on IT14216 100 1 Operation in this 2 area is limited (on) ...
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... Ambient Temperature °C Note on usage : Since the EMH2409 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any " ...