EMH2308-TL-E ON Semiconductor, EMH2308-TL-E Datasheet - Page 2

• Manufacturer Part Number: EMH2308-TL-E
• Description: MOSFET P-CH DUAL 30V 3A ECH8
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of EMH2308-TL-E

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: -
• Gate Charge (qg) @ Vgs: 4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 320pF @ 10V
• Power - Max: 1.2W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Continued from preceding page.
Package Dimensions
unit : mm (typ)
7045-002
Switching Time Test Circuit
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
1
--4.5V
8
P.G
0.5
0V
0.2
PW=10μs
D.C.≤1%
2.0
V IN
Parameter
4
5
V IN
G
50Ω
V DD = --10V
D
S
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : EMH8
I D = --1.5A
R L =6.67Ω
R DS (on)1
R DS (on)2
R DS (on)3
EMH2308
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
0.125
Symbol
V OUT
I D =--3A, V GS =--4.5V
I D =--1.0A, V GS =--2.5V
I D =--0.5A, V GS =--1.8V
V DS =--10V, f=1MHz
V DS =--10V, f=1MHz
V DS =--10V, f=1MHz
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
V DS =--10V, V GS =--4.5V, I D =--3A
V DS =--10V, V GS =--4.5V, I D =--3A
V DS =--10V, V GS =--4.5V, I D =--3A
I S =--3A, V GS =0V
EMH2308
Conditions
Electrical Connection
8
1
7
2
6
3
min
5
4
Ratings
typ
--0.83
320
155
7.1
4.0
0.6
1.1
65
98
66
50
21
37
32
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Top view
max
--1.2
137
235
85
No. A1445-2/4
Unit
mΩ
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V