EMH2308-TL-E ON Semiconductor, EMH2308-TL-E Datasheet

EMH2308-TL-E

Manufacturer Part Number

EMH2308-TL-E

Description

MOSFET P-CH DUAL 30V 3A ECH8

Manufacturer

ON Semiconductor

Series

-r

Datasheet

1.EMH2308-TL-E.pdf (4 pages)

Specifications of EMH2308-TL-E

Fet Type

2 P-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

85 mOhm @ 3A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

Gate Charge (qg) @ Vgs

4nC @ 4.5V

Input Capacitance (ciss) @ Vds

320pF @ 10V

Power - Max

1.2W

Mounting Type

Package / Case

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

EMH2308-TL-E

Manufacturer:

ON Semiconductor

Quantity:

2 350

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Ordering number : ENA1445

EMH2308

Features

Speciﬁ cations

Absolute Maximum Ratings at Ta=25°C

Electrical Characteristics at Ta=25°C

Marking : MH

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Total Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

•

The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,

thereby enabling high-density mounting.

1.8V drive.

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not

be intended for use for any "special application" (medical equipment whose purpose is to sustain life,

aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal

system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten

human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they

grant any guarantee thereof. If you should intend to use our products for applications outside the standard

applications of our customer who is considering such use and/or outside the scope of our intended standard

applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the

intended use, our customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are

not guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an

independent device, the customer should always evaluate and test devices mounted in the customer ' s

products or equipment.

Parameter

V DSS

V GSS

I D

I DP

P D

P T

Tch

Tstg

V (BR)DSS

I DSS

I GSS

V GS (off)

| yfs |

Symbol

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

www.semiconductor-sanyo.com/network

SANYO Semiconductors

PW≤10μs, duty cycle≤1%

When mounted on ceramic substrate (900mm

I D =--1mA, V GS =0V

V DS =--20V, V GS =0V

V GS =±8V, V DS =0V

V DS =--10V, I D =--1mA

V DS =--10V, I D =--1.5A

EMH2308

Conditions

×0.8mm) 1unit

×0.8mm)

41509PE MS IM TC-00001891

DATA SHEET

min

--0.4

--20

2.1

Ratings

typ

Ratings

3.6

Continued on next page.

--55 to +150

max

--1.3

--20

±10

--20

±10

150

1.0

1.2

- -3

--1

No. A1445-1/4

Unit

°C

μA

Related parts for EMH2308-TL-E

EMH2308-TL-E Summary of contents

Page 1

... Ordering number : ENA1445 EMH2308 Features The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, • thereby enabling high-density mounting. 1.8V drive. • Speciﬁ cations Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) ...

Page 2

... See speciﬁ ed Test Circuit (off) See speciﬁ ed Test Circuit See speciﬁ ed Test Circuit =--10V =--4.5V =--3A Qgs V DS =--10V =--4.5V =--3A Qgd V DS =--10V =--4.5V =-- =--3A =0V Electrical Connection 8 0.125 1 V OUT EMH2308 Ratings Unit min typ max 137 155 235 320 ...

Page 3

... Drain Current Time -- 100 --0.01 --0.1 --1.0 Drain Current EMH2308 --5 --10V --4.5 --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0 --1.2V 0 --0.8 --0.9 --1.0 0 --0.2 IT14533 240 Ta=25°C 220 200 180 160 140 120 100 --6 --7 --8 --60 --40 --20 ...

Page 4

... Ambient Temperature °C Note on usage : Since the EMH2308 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...

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