MCH6602-TL-E ON Semiconductor, MCH6602-TL-E Datasheet - Page 4

• Manufacturer Part Number: MCH6602-TL-E
• Description: MOSFET N-CH DUAL 30V 350MA MCPH6
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of MCH6602-TL-E

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 350mA
• Vgs(th) (max) @ Id: -
• Gate Charge (qg) @ Vgs: 1.58nC @ 10V
• Input Capacitance (ciss) @ Vds: 7pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, No Lead
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

0.01
0.01
100
1.0
0.1
1.0
1.0
0.1
10
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
7
5
3
2
7
5
3
2
0.5
1.0
0
Ta=25 ° C
Single pulse
Mounted on a ceramic board (900mm
Operation in
this area is
limited by R DS (on).
2
0.6
2
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
4
Diode Forward Voltage, V SD -- V
0.7
3
6
I S -- V SD
8
5
0.8
A S O
Ciss
Coss
Crss
10
7
0.9
10
12
2
✕0.8mm) 1unit
14
1.0
2
16
PW≤10µs
V GS =0V
f=1MHz
1.1
3
18
IT00037
IT00039
IT01117
1.2
MCH6602
20
5
1000
100
1.0
0.8
0.6
0.4
0.2
10
10
0
7
5
3
2
7
5
3
2
0.01
9
8
7
6
5
4
3
2
1
0
0
0
V DS =10V
I D =150mA
0.2
20
Ambient Temperature, Ta -- ° C
2
0.4
40
Total Gate Charge, Qg -- nC
Drain Current, I D -- A
SW Time -- I D
0.6
V GS -- Qg
60
3
P D -- Ta
t f
t d (on)
t r
0.8
80
5
100
1.0
7
120
1.2
0.1
V DD =15V
V GS =4V
No.6445-4/5
140
1.4
IT00038
IT00040
IT01118
160
1.6
2