MCH6602-TL-E ON Semiconductor, MCH6602-TL-E Datasheet
MCH6602-TL-E
Specifications of MCH6602-TL-E
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MCH6602-TL-E Summary of contents
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... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 12407 TI IM TC-00000415 / 70306 / 42806PE MS IM TB-00002288 / 30300 TS (KOTO) TA-2509 MCH6602 SANYO Semiconductors N-Channel Silicon MOSFET General-Purpose Switching Device ...
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... See specified Test Circuit (off) See specified Test Circuit See specified Test Circuit =10V =10V =150mA Qgs V DS =10V =10V =150mA Qgd V DS =10V =10V =150mA =150mA =0V V OUT MCH6602 Ratings min typ max 19 65 155 120 1.58 0.26 0.31 0.87 Electrical Connection ...
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... R DS (on 80mA =40mA Gate-to-Source Voltage (on Ta=75°C 5 25°C --25° 1 0.01 0.1 Drain Current (on --60 --40 -- Ambient Temperature ° C MCH6602 0. =10V 0.25 0.20 0. =1.5V 0.10 0.05 0 0.8 0.9 1.0 0 IT00029 10 Ta=25° 1 0.01 IT00031 100 V GS =2. 1 0.001 IT00033 1 0 0.01 100 ...
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... Crss 2 1 Drain-to-Source Voltage 1 Operation in 0.1 this area is 7 limited (on Ta=25 ° Single pulse ✕0.8mm) 1unit 2 Mounted on a ceramic board (900mm 0. 1.0 10 Drain-to-Source Voltage MCH6602 1000 100 1.0 1.1 1.2 0.01 IT00037 10 f=1MHz V DS =10V =150mA IT00039 1.0 PW≤10µs ...
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... Note on usage : Since the MCH6602 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment ...