DMC4040SSD-13 Diodes Zetex, DMC4040SSD-13 Datasheet - Page 7

• Manufacturer Part Number: DMC4040SSD-13
• Description: MOSFET N/P-CH 40V 5.7A SO8
• Manufacturer: Diodes Zetex
• Series: -r

Specifications of DMC4040SSD-13

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 37.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 1790pF @ 20V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: DMC4040SSD-13TR

Electrical Characteristics – Q2 P-CHANNEL
Typical Characteristics – Q2 P-Channel
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 11)
Forward Transconductance (Notes 11 & 12)
Diode Forward Voltage (Note 11)
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (Note 13)
Total Gate Charge (Note 13)
Gate-Source Charge (Note 13)
Gate-Drain Charge (Note 13)
Turn-On Delay Time (Note 13)
Turn-On Rise Time (Note 13)
Turn-Off Delay Time (Note 13)
Turn-Off Fall Time (Note 13)
Notes:
DMC4040SSD
Document number: DS32120 Rev. 2 - 2
11.Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
12. For design aid only, not subject to production testing.
13. Switching characteristics are independent of operating junction temperatures.
30
25
20
15
10
5
0
0
Characteristic
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Output Characteristic
DS
0.5
1
1.5
Symbol
R
BV
V
t
t
I
I
C
DS(on)
V
C
C
GS(th)
Q
Q
D(on)
D(off)
DSS
GSS
Q
Q
g
R
oss
t
t
SD
rss
DSS
iss
fs
gs
gd
r
f
g
g
g
2
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@T
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Min
-0.8
-40
⎯
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
A
= 25°C unless otherwise specified
0.018
0.030
1643
16.6
6.43
14.0
33.7
14.7
53.7
30.9
Typ
-1.3
  - 0.7
179
128
5.5
7.3
6.9
–
–
–
30
25
20
15
10
5
0
0
V
0.025
0.045
±100
Max
-1.0
-1.8
-1.0
DS
⎯
–
–
–
–
–
–
–
–
–
–
–
–
–
-V
Fig. 13 Typical Transfer Characteristic
= -5V
Diodes Incorporated
GS
1
, GATE-SOURCE VOLTAGE (V)
A Product Line of
Unit
μA
nA
nC
pF
ns
Ω
Ω
V
V
S
V
2
I
V
V
I
V
V
V
I
V
f = 1MHz
V
V
V
V
I
T = -55°C
D
D
S
D
DS
GS
GS
GS
DS
DS
DS
GS
GS
DD
A
T = 25°C
= -250μA, V
= -250μA, V
= -1A, V
= -3A
T = 85°C
A
A
= -40V, V
= ±20V, V
= -10V, I
= -4.5V, I
= -5V, I
= -20V, V
= 0V, V
= -4.5V
= -10V
= -20V, V
3
Test Condition
DMC4040SSD
GS
D
GS
D
= -3A
D
= 0V
GS
GS
GS
GS
DS
DS
= -3A
= 0V, f = 1MHz
= -3A
4
T = 125°C
= 0V
= 0V
= -10V
A
= V
= 0V
= 0V
T = 150°C
V
I
© Diodes Incorporated
D
A
DS
= -3A
GS
= -20V
March 2011
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