DMC4040SSD-13 Diodes Zetex, DMC4040SSD-13 Datasheet - Page 4

• Manufacturer Part Number: DMC4040SSD-13
• Description: MOSFET N/P-CH 40V 5.7A SO8
• Manufacturer: Diodes Zetex
• Series: -r

Specifications of DMC4040SSD-13

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 37.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 1790pF @ 20V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: DMC4040SSD-13TR

Electrical Characteristics – Q1 N-CHANNEL
Typical Characteristics – Q1 N-Channel
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 8 & 9)
Diode Forward Voltage (Note 8)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (Note 10)
Total Gate Charge (Note 10)
Gate-Source Charge (Note 10)
Gate-Drain Charge (Note 10)
Turn-On Delay Time (Note 10)
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
Turn-Off Fall Time (Note 10)
Notes:
DMC4040SSD
Document number: DS32120 Rev. 2 - 2
8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
30
25
20
15
10
5
0
0
Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 Typical Output Characteristic
0.5
V
GS
= 8.0V
V
GS
1
V
GS
= 2.5V
= 4.5V
V
V
1.5
V
GS
GS
GS
= 4.0V
= 3.5V
= 3.0V
Symbol
R
BV
V
DS (ON)
t
t
I
I
C
V
C
C
GS(th)
Q
Q
D(on)
D(off)
DSS
GSS
Q
Q
g
R
oss
t
t
SD
rss
DSS
iss
fs
gs
gd
r
f
g
g
g
2
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@T
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Min
0.8
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
A
= 25°C unless otherwise specified
0.013
0.028
1790
12.6
1.03
16.0
37.6
15.1
24.3
Typ
160
120
1.3
0.7
7.8
6.6
8.1
5.3
⎯
⎯
⎯
30
25
20
15
10
5
0
0
V
0.025
0.040
±100
Max
DS
1.0
1.8
1.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
Fig. 2 Typical Transfer Characteristic
= 5V
GS
Diodes Incorporated
1
, GATE-SOURCE VOLTAGE (V)
A Product Line of
Unit
μA
nA
nC
pF
ns
Ω
Ω
V
V
S
V
T = 125°C
2
A
T = 150°C
A
I
V
V
I
V
V
V
I
V
f= 1MHz
V
V
V
V
I
D
D
S
D
DS
GS
GS
GS
DS
DS
DS
GS
GS
DD
= 250μA, V
= 1A, V
= 3A
= 250μA, V
= 40V, V
= 5V, I
= 20V, V
= 0V, V
= 20V, V
= ±20V, V
= 10V, I
= 4.5V, I
= 4.5V
= 10V
3
Test Condition
GS
T = -55°C
D
A
DMC4040SSD
GS
= 3A
= 0V
D
D
GS
GS
GS
T = 25°C
= 3A
DS
GS
= 3A
A
= 0V, f= 1MHz
DS
= 0V
= 0V
= 10V
= V
T = 85°C
4
= 0V
= 0V
A
V
I
© Diodes Incorporated
D
GS
DS
= 3A
= 20V
March 2011
5