EM6K31T2R Rohm Semiconductor, EM6K31T2R Datasheet - Page 4

• Manufacturer Part Number: EM6K31T2R
• Description: TRANS MOSFET N-CH 60V 0.25A EMT6
• Manufacturer: Rohm Semiconductor
• Series: -r

Specifications of EM6K31T2R

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 250mA
• Vgs(th) (max) @ Id: 2.3V @ 1mA
• Gate Charge (qg) @ Vgs: -
• Input Capacitance (ciss) @ Vds: 15pF @ 25V
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: EMT6
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

○
EM6K31
c
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2010 ROHM Co., Ltd. All rights reserved.
0.001
100
0.01
10
0.1
1
1
0.01
0
Ta=25C
f=1MHz
V
V
Pulsed
DRAIN-SOURCE VOLTAGE :
GS
SOURCE-DRAIN VOLTAGE : V
GS
=0V
=0V
Fig.13 Typical Capacitance
Crss
Fig.10 Reverse Drain Current
0.1
0.5
vs. Sourse-Drain Voltage
vs. Drain-Source Voltage
Coss
1
1
Ta=125C
Ta=75C
Ta=25C
Ta=-25C
10
Ciss
V
DS
SD
[V]
100
[V]
1.5
8
6
4
2
0
0
GATE-SOURCE VOLTAGE : V
Fig.11 Static Drain-Source On-State
2.5
Resistance vs. Gate Source Voltage
I
D
= 0.01A
5
4/5
I
D
= 0.25A
Ta=25C
Pulsed
7.5
GS
[V]
10
1000
100
10
1
0.01
Fig.12 Switching Characteristics
t
d(on)
DRAIN-CURRENT : I
t
d(off)
0.1
t
f
D
Ta=25C
V
V
R
Pulsed
[A]
DD
GS
G
2010.09 - Rev.B
=10
t
= 30V
=10V
r
Data Sheet
1