EM6K31T2R Rohm Semiconductor, EM6K31T2R Datasheet - Page 2

• Manufacturer Part Number: EM6K31T2R
• Description: TRANS MOSFET N-CH 60V 0.25A EMT6
• Manufacturer: Rohm Semiconductor
• Series: -r

Specifications of EM6K31T2R

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 250mA
• Vgs(th) (max) @ Id: 2.3V @ 1mA
• Gate Charge (qg) @ Vgs: -
• Input Capacitance (ciss) @ Vds: 15pF @ 25V
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: EMT6
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

○
EM6K31
*Pulsed
*Pulsed
<It is the same ratings for Tr1 and Tr2.>
Gate-source leakage
Drain-source breakdown voltage V
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
<It is the same ratings for Tr1 and Tr2.>
Forward voltage
c
 Electrical characteristics (Ta = 25C)
Body diode characteristics (Source-Drain) (Ta = 25C)
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2010 ROHM Co., Ltd. All rights reserved.
Parameter
Parameter
Symbol
Symbol
R
V
l Y
(BR)DSS
t
t
I
C
I
DS (on)
C
C
V
GS (th)
d(on)
d(off)
GSS
DSS
t
t
oss
SD
iss
rss
r
fs
f
l
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
0.25
Min.
Min.
1.0
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Typ.
1.7
2.1
2.3
3.0
4.5
2.0
3.5
15
18
28
5
-
-
-
-
-
-
2/5
Max.
Max.
12.0
10
2.3
2.4
3.0
3.2
1.2
1
-
-
-
-
-
-
-
-
-
Unit
Unit
pF
pF
pF
A
A
ns
ns
ns
ns

V
V
S
V
V
I
V
V
I
I
I
I
I
V
V
f=1MHz
I
V
R
R
I
D
D
D
D
D
D
D
s
=250mA, V
GS
DS
DS
DS
GS
GS
L
G
=1mA, V
=250mA, V
=250mA, V
=250mA, V
=10mA, V
=250mA, V
=100mA, V
=10
=60V, V
=10V, I
=25V
=20V, V
=0V
=10V
300
Conditions
Conditions
GS
D
GS
GS
=1mA
=0V
GS
DS
GS
GS
GS
DS
DD
=0V
=2.5V
=0V
=0V
=10V
=4.5V
=4.0V
=10V
30V
2010.09 - Rev.B
Data Sheet