DMC2038LVT-7 Diodes Inc, DMC2038LVT-7 Datasheet - Page 6

• Manufacturer Part Number: DMC2038LVT-7
• Description: MOSFET N/P-CH 20V TSOT26
• Manufacturer: Diodes Inc
• Series: -r

Specifications of DMC2038LVT-7

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.7A, 2.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 0.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 530pF @ 10V
• Power - Max: 1.13W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: DMC2038LVT-7DITR

Electrical Characteristics P-CHANNEL – Q2
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
Maximun Body-Diode Continuous Current
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
Total Gate Charge (V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMC2038LVT
Document number: DS35417 Rev. 1 - 2
7. Short duration pulse test used to minimize self-heating effec
8. Guaranteed by design. Not subject to product testing.
20
15
10
5
0
0
Fig. 13 Typical Output Characteristics
-V , DRAIN -SOURCE VOLTAGE(V)
GS
GS
Characteristic
DS
-V
= -4.5V)
= -10V)
0.5
-V
GS
GS
-V
=4.0V
=10V
GS
=4.5V
1
-V
GS
=3.5V
@T
1.5
c
-V
= 25°C
-V
-V
-V
GS
GS
GS
GS
=1.5V
=3.0V
=2.0V
=2.5V
Symbol
R
BV
V
2
www.diodes.com
DS (ON)
t
t
I
I
C
|Y
V
I
C
GS(th)
C
Q
Q
D(on)
D(off)
DSS
GSS
S
R
Q
Q
oss
t
t
SD
rss
DSS
iss
gs
gd
r
fs
f
g
g
g
|
@T
6 of 10
A
= 25°C unless otherwise specified
Min
-0.4
-20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.95
Typ
-0.8
20
15
10
102
530
1.2
57
76
10
70
60
72
14
11
12
21
13
7
5
0
-
-
-
-
-
0
0.5
±100
Fig. 14 Typical Transfer Characteristics
Max
-1.0
-1.0
110
168
-1.0
-3.2
705
74
95
90
10
20
22
34
23
-V
-
-
-
-
-
-
GS
1
, GATE SOURCE VOLTAGE(V)
1.5
Unit
mΩ
nC
nC
nC
nC
μA
nA
pF
pF
pF
nS
nS
nS
nS
V
V
S
V
A
Ω
2
2.5
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
I
V
R
D
GS
DS
GS
DS
GS
GS
GS
DS
GS
DS
DS
GS
DS
G
= -6A
= 6Ω, I
= 0V, I
= -16V, V
= ±12V, V
= V
= -4.5V, I
= -2.5V, I
= -1.8V, I
= -5V, I
= 0V, I
= -10V, V
= 0V, V
= -10V, V
= -10V, V
3
GS
Test Condition
DMC2038LVT
3.5
S
, I
D
S
D
GS
= -1A,
D
= -0.6A
= -250μA
= -3.0A
D
D
D
GS
GS
GS
= -250μA
DS
DS
= 0V, f = 1MHz
4
= -3.0A
= -1.5A
= -1.0A
© Diodes Incorporated
= 0V
= 0V,
= -15V,
= -4.5V,
= 0V
4.5
July 2011
5