DMC2038LVT-7 Diodes Inc, DMC2038LVT-7 Datasheet - Page 3

• Manufacturer Part Number: DMC2038LVT-7
• Description: MOSFET N/P-CH 20V TSOT26
• Manufacturer: Diodes Inc
• Series: -r

Specifications of DMC2038LVT-7

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.7A, 2.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 0.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 530pF @ 10V
• Power - Max: 1.13W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: DMC2038LVT-7DITR

Electrical Characteristics N-CHANNEL – Q1
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
Maximun Body-Diode Continuous Current
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
Total Gate Charge (V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMC2038LVT
Document number: DS35417 Rev. 1 - 2
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
30
25
20
15
10
5
0
0
V
GS
V
=3.5V
GS
V , DRAIN -SOURCE VOLTAGE(V)
V
Fig. 1 Typical Output Characteristics
GS
GS
=4.0V
Characteristic
GS
DS
V
=4.5V
= 4.5V)
= 10V)
GS
0.5
=10V
1
@T
V
V
GS
1.5
GS
c
=2.5V
=1.5V
= 25°C
V
V
GS
GS
=3.0V
=2.0V
Symbol
R
BV
V
2
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DS (ON)
t
t
I
I
C
|Y
V
I
C
GS(th)
C
Q
Q
D(on)
D(off)
DSS
GSS
S
R
Q
Q
oss
t
t
SD
rss
DSS
iss
gs
gd
r
fs
f
g
g
g
|
@T
3 of 10
A
= 25°C unless otherwise specified
Min
0.4
0.4
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
20
15
10
400
1.9
5.7
0.7
1.4
27
33
43
70
65
12
25
9
5
8
8
5
0
-
-
-
-
-
-
0
V
DS
= 5.0V
±100
Max
530
100
1.0
1.0
1.1
4.5
35
43
56
90
17
10
16
40
16
0.5
Fig. 2 Typical Transfer Characteristics
-
-
-
-
-
-
V
GS
, GATE SOURCE VOLTAGE(V)
Unit
mΩ
1
nC
nC
nC
nC
μA
nA
pF
pF
pF
Ω
ns
ns
ns
ns
V
V
S
V
A
T = 25 C
A
T = -55 C
1.5
A
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
I
V
R
D
°
GS
DS
GS
DS
GS
GS
GS
DS
GS
DS
DS
GS
DS
G
= 5.8A
= 6Ω, I
= 0V, I
=16V, V
= ±12V, V
= V
= 4.5V, I
= 2.5V, I
= 1.8V, I
= 5V, I
= 0V, I
= 10V, V
= 0V, V
= 10V, V
= 10V, V
°
GS
Test Condition
DMC2038LVT
2
DS
, I
D
D
S
GS
D
GS
= 3.4A
= 1A
= 250μA
D
D
D
GS
DS
GS
= 1A,
= 250μA
DS
= 4.0A
= 2.5A
= 1.5A
= 0V, f = 1MHz
T = 125 C
= 0V
= 0V,
= 15V,
= 4.5V,
2.5
© Diodes Incorporated
A
T = 150 C
= 0V
A
T = 85 C
A
°
°
July 2011
°
3