MT46V32M16BN-6:FTR Micron Technology Inc, MT46V32M16BN-6:FTR Datasheet - Page 34

• Manufacturer Part Number: MT46V32M16BN-6:FTR
• Manufacturer: Micron Technology Inc

Specifications of MT46V32M16BN-6:FTR

• Lead Free Status / Rohs Status: Compliant

Table 23:
Table 24:
Table 25:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
AC Characteristics
Parameter
Speed
Speed
DQS write postamble
Write recovery time
Internal WRITE-to-READ command delay
Exit SELF REFRESH-to-non-READ command
Exit SELF REFRESH-to-READ command
Data valid output window
-75Z/-75E
-75Z/-75E
-75Z/-75E
-75Z/-75E
-75Z/-75E
-75Z/-75E
Electrical Characteristics and Recommended AC Operating Conditions (-75) (continued)
Notes: 1–6, 16–18, 34 apply to the entire table; Notes appear on page 35;
0°C ≤ T
Input Slew Rate Derating Values for Addresses and Commands
Note: 15 applies to the entire table; Notes appear on page 35;
0°C ≤ T
Input Slew Rate Derating Values for DQ, DQS, and DM
Note: 32 applies to the entire table; Notes appear on page 35;
0°C ≤ T
A
A
A
≤ +70°C; V
≤ +70°C; V
≤ +70°C; V
Slew Rate
Slew Rate
0.500 V/ns
0.400 V/ns
0.300 V/ns
0.500 V/ns
0.400 V/ns
0.300 V/ns
DD
DD
DD
Q = +2.5V ±0.2V, V
Q = +2.5V ±0.2V, V
Q = +2.5V ±0.2V, V
DD
DD
DD
= +2.5V ±0.2V
= +2.5V ±0.2V
= +2.5V ±0.2V
1.00
1.05
1.10
0.50
0.55
0.60
t
t
34
DS
IS
Symbol
tWPST
t
t
t
XSNR
XSRD
tWR
WTR
n/a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
512Mb: x4, x8, x16 DDR SDRAM
Min
200
0.4
15
75
1
t
QH -
0.50
0.55
0.60
t
t
DH
IH
-75
1
1
1
t
DQSQ
Max
0.6
–
–
–
–
©2000 Micron Technology, Inc. All rights reserved.
Units
tCK
t
t
ns
CK
ns
CK
ns
Units
Units
ns
ns
ns
ns
ns
ns
Notes
20
26