IRF5210SHR International Rectifier, IRF5210SHR Datasheet - Page 6

• Manufacturer Part Number: IRF5210SHR
• Manufacturer: International Rectifier
• Type: Power MOSFETr

Specifications of IRF5210SHR

• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.06Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 40A
• Power Dissipation: 3.8W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / Rohs Status: Not Compliant

IRF5210S/L
-10V
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge Waveform
V
I
A S
G
R G
-2 0 V
Q
V D S
GS
t p
I A S
D .U .T
t p
0 .0 1
L
Q
Charge
Q
GD
G
D R IV E R
V
(BR)DSS
1 5 V
V D D
A
2 0 0 0
1 6 0 0
1 2 0 0
8 0 0
4 0 0
0
2 5
Fig 12c. Maximum Avalanche Energy
Fig 13b. Gate Charge Test Circuit
S tarting T , J unc tion T em perature (°C )
12V
V
GS
5 0
Same Type as D.U.T.
Current Regulator
.2 F
Vs. Drain Current
J
7 5
50K
-3mA
Current Sampling Resistors
.3 F
1 0 0
I
G
1 2 5
D.U.T.
T O P
B O T TO M
I
D
1 5 0
+
-
V
DS
-1 5A
-21 A
-8 .6A
I
D
1 7 5
A