IRF5210SHR International Rectifier, IRF5210SHR Datasheet
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IRF5210SHR
Specifications of IRF5210SHR
Related parts for IRF5210SHR
IRF5210SHR Summary of contents
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... Fast Switching P-Channel Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...
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IRF5210S/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
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VGS 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOT TOM - 4. -4 0µ ...
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IRF5210S iss ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) ...
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IRF5210S Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G -10V ...
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Peak Diode Recovery dv/dt Test Circuit + * D.U Reverse Polarity of D.U.T for P-Channel Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Body Diode Forward Current D.U.T. V ...
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IRF5210S Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) - AX. 2 1 (.6 10) 1 ...
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Package Outline TO-262 Outline Part Marking Information TO-262 IRF5210S/L ...
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IRF5210S/L Tape & Reel Information 2 D Pak IRE CTIO (. (. IRE ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...