KMZ10A1 NXP Semiconductors, KMZ10A1 Datasheet - Page 4

• Manufacturer Part Number: KMZ10A1
• Manufacturer: NXP Semiconductors

Specifications of KMZ10A1

• Lead Free Status / Rohs Status: Not Compliant

Philips Semiconductors
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
Notes
1. Before first operation or after operation outside the SOAR (Fig.4) the sensor has to be reset by application of an
2. No disturbing field (H
3. Sensitivity measured as V
4. See application information.
1998 Apr 06
R
SYMBOL
V
H
S
TCV
VCV
R
TCR
V
TCV
FL
FH
f
Characteristics with H
H
S
SYMBOL
amb
CC
offset
s
th j-a
y
bridge
y
Magnetic field sensor
auxiliary field H
decrease of sensitivity.
= 25 C and H
O
offset
O
bridge
DC supply voltage
operating range
sensitivity
temperature coefficient of output
voltage at constant supply voltage
temperature coefficient of output
voltage at constant supply current
bridge resistance
temperature coefficient of bridge
resistance
offset voltage
offset voltage drift
linearity deviation of output voltage
hysteresis of output voltage
operating frequency
operating range
sensitivity
thermal resistance from junction to ambient
x
x
= 3 kA/m.
= 0.5 kA/m unless otherwise specified; see notes 1 and 2.
PARAMETER
x
d
) allowed; for stable operation under disturbing conditions see Fig.4 (SOAR) and see Fig.5 for
= 0 (switched H
O
/ H
y
PARAMETER
between H
x
, see note 4); V
y
note 2
open circuit;
notes 2 and 3
V
T
I
T
T
T
H
H
H
note 2
slope between H
and H
= 0 and H
B
CC
amb
amb
j
bridge
y
y
y
= 3 mA;
= 25 to +125 C
= 0 to 0.25 kA/m
= 0 to 0.4 kA/m
= 0 to 0.5 kA/m
= 5 V;
= 25 to +125 C
= 25 to +125 C
CONDITIONS
y
= 25 to +125 C
= 40 A/m
4
CC
y
= 0.4 kA/m.
= 5 V
y
= 0
1
1
1
11
0.85
0
14
0.5
1.5
6
0.05
MIN.
VALUE
180
5
0.25
0.4
0.15
TYP.
Product specification
17
1.75
+1.5
0.8
2.5
4.0
0.5
1
27
0.5
6
0.05
MAX.
KMZ10A1
UNIT
K/W
V
kA/m
%/K
%/K
k
%/K
mV/V
% FS
% FS
% FS
% FS
MHz
kA/m
mV V
---------------- -
mV V
---------------- -
kA m
---------------
kA m
UNIT
V V
K