STM32L151R6H6 STMicroelectronics, STM32L151R6H6 Datasheet - Page 86
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STM32L151R6H6
Manufacturer Part Number
STM32L151R6H6
Description
IC MCU 32BIT 32KB FLASH 64BGA
Manufacturer
STMicroelectronics
Series
STM32r
Datasheet
1.STM32L152-EVAL.pdf
(107 pages)
Specifications of STM32L151R6H6
Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
32MHz
Connectivity
I²C, IrDA, LIN, SPI, UART/USART, USB
Peripherals
Brown-out Detect/Reset, DMA, I²S, POR, PWM, WDT
Number Of I /o
51
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Eeprom Size
4K x 8
Ram Size
10K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 20x12b; D/A 2x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-TFBGA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-11483
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STM32L151R6H6
Manufacturer:
STM
Quantity:
640
Company:
Part Number:
STM32L151R6H6
Manufacturer:
STMicroelectronics
Quantity:
10 000
Electrical characteristics
86/107
Table 50.
1. ADC DC accuracy values are measured after internal calibration.
2. ADC accuracy vs. negative injection current: injecting negative current on any of the standard (non-robust)
3. Based on characterization, not tested in production.
Symbol
SINAD
SINAD
SINAD
ENOB
ENOB
ENOB
SNR
THD
SNR
THD
SNR
THD
analog input pins should be avoided as this significantly reduces the accuracy of the conversion being
performed on another analog input. It is recommended to add a Schottky diode (pin to ground) to standard
analog pins which may potentially inject negative current.
Any positive injection current within the limits specified for I
affect the ADC accuracy.
EO
EG
ED
EO
EG
ED
EO
EG
ED
ET
EL
ET
EL
ET
EL
Total unadjusted error
Offset error
Gain error
Differential linearity error
Integral linearity error
Effective number of bits
Signal-to-noise and
distorsion ratio
Signal-to-noise ratio
Total harmonic distorsion
Total unadjusted error
Offset error
Gain error
Differential linearity error
Integral linearity error
Effective number of bits
Signal-to-noise and
distorsion ratio
Signal-to-noise ratio
Total harmonic distorsion
Total unadjusted error
Offset error
Gain error
Differential linearity error
Integral linearity error
Effective number of bits
Signal-to-noise and
distorsion ratio
Signal-to-noise ratio
Total harmonic distorsion
ADC accuracy
Parameter
(1)(2)
Doc ID 17659 Rev 4
2.4 V V
2.4 V V
f
T
2.4 V V
V
f
T
1 kHz F
2.4 V V
1.8 V V
f
T
1.8 V V
1.8 V V
f
T
ADC
ADC
ADC
ADC
A
A
A
A
DDA
= -40 to 105 C
= -40 to 105 C
= -40 to 105 C
= -40 to 105 C
= 16 MHz, R
= 16 MHz, R
= 16 MHz, R
= 16 MHz, R
=
Test conditions
V
REF+
DDA
REF+
DDA
DDA
REF+
DDA
REF+
input
3.6 V
3.6 V
3.6 V
2.4 V
INJ(PIN)
100 kHz
3.6 V
2.4 V
2.4 V
AIN
AIN
AIN
AIN
and I
= 50
= 50
= 50
= 50
STM32L151xx, STM32L152xx
INJ(PIN)
±TBD
±TBD
±TBD
±TBD
±TBD
±TBD
±TBD
±TBD
in
Typ
-75
1.5
1.7
1.5
1.5
10
62
62
Section 6.3.11
2
1
1
4
2
4
1
2
1
1
1
Max
±TBD
±TBD
±TBD
±TBD
±TBD
±TBD
±TBD
±TBD
±TBD
±TBD
±TBD
±TBD
3.5
6.5
1.5
1.5
4
2
2
3
4
6
2
3
3
2
2
(3)
does not
Unit
LSB
LSB
LSB
bits
bits
bits
dB
dB
dB