STM32L151R6H6 STMicroelectronics, STM32L151R6H6 Datasheet - Page 70
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STM32L151R6H6
Manufacturer Part Number
STM32L151R6H6
Description
IC MCU 32BIT 32KB FLASH 64BGA
Manufacturer
STMicroelectronics
Series
STM32r
Datasheet
1.STM32L152-EVAL.pdf
(107 pages)
Specifications of STM32L151R6H6
Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
32MHz
Connectivity
I²C, IrDA, LIN, SPI, UART/USART, USB
Peripherals
Brown-out Detect/Reset, DMA, I²S, POR, PWM, WDT
Number Of I /o
51
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Eeprom Size
4K x 8
Ram Size
10K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 20x12b; D/A 2x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-TFBGA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-11483
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STM32L151R6H6
Manufacturer:
STM
Quantity:
640
Company:
Part Number:
STM32L151R6H6
Manufacturer:
STMicroelectronics
Quantity:
10 000
Electrical characteristics
6.3.9
70/107
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
●
●
A device reset allows normal operations to be resumed.
The test results are given in
defined in application note AN1709.
Table 33.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
●
●
●
V
V
Symbol
FESD
EFTB
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
V
compliant with the IEC 61000-4-4 standard.
Corrupted program counter
Unexpected reset
Critical data corruption (control registers...)
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test is
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
Fast transient voltage burst limits to be
applied through 100 pF on V
pins to induce a functional disturbance
EMS characteristics
Parameter
Table
Doc ID 17659 Rev 4
33. They are based on the EMS levels and classes
DD
and V
SS
V
f
conforms to IEC 61000-4-2
V
f
conforms to IEC 61000-4-4
HCLK
HCLK
DD
DD
3.3 V, LQFP100, T
3.3 V, LQFP100, T
32 MHz
32 MHz
STM32L151xx, STM32L152xx
Conditions
A
A
+25 °C,
+25 °C,
DD
and
Level/
Class
2B
4A