STM8L151G3U6 STMicroelectronics, STM8L151G3U6 Datasheet - Page 96
STM8L151G3U6
Manufacturer Part Number
STM8L151G3U6
Description
IC MCU 8BIT 8KB FLASH 28UFQFPN
Manufacturer
STMicroelectronics
Series
STM8L EnergyLiter
Datasheet
1.STM8L151G3U6.pdf
(110 pages)
Specifications of STM8L151G3U6
Core Processor
STM8
Core Size
8-Bit
Speed
16MHz
Connectivity
I²C, IrDA, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, DMA, IR, POR, PWM, WDT
Number Of I /o
26
Program Memory Size
8KB (8K x 8)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 18x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
28-UFQFN
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-11494
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Electrical parameters
7.4
96/110
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models
can be simulated: human body model and charge device model. This test conforms to the
JESD22-A114A/A115A standard.
Table 52.
1. Data based on characterization results, not tested in production.
Static latch-up
●
Table 53.
Thermal characteristics
The maximum chip junction temperature (T
Table 14: General operating conditions on page
The maximum chip-junction temperature, T
the following equation:
Where:
●
●
●
●
●
V
V
Symbol
ESD(HBM)
ESD(CDM)
LU: 3 complementary static tests are required on 6 parts to assess the latch-up
performance. A supply overvoltage (applied to each power supply pin) and a current
injection (applied to each input, output and configurable I/O pin) are performed on each
sample. This test conforms to the EIA/JESD 78 IC latch-up standard. For more details,
refer to the application note AN1181.
T
Θ
P
P
internal power.
P
Where:
P
Amax
JA
Dmax
INTmax
I/Omax
I/Omax
Symbol
is the package junction-to-ambient thermal resistance in ° C/W
LU
is the maximum ambient temperature in ° C
is the sum of P
ESD absolute maximum ratings
Electrical sensitivities
Electrostatic discharge voltage
(human body model)
Electrostatic discharge voltage
(charge device model)
= Σ (V
represents the maximum power dissipation on output pins
is the product of I
OL
*I
Static latch-up class
OL
Ratings
) + Σ((V
INTmax
Doc ID 018780 Rev 2
DD
T
Jmax
DD
and P
and V
-V
= T
Parameter
OH
I/Omax
DD
Amax
)*I
, expressed in Watts. This is the maximum chip
Jmax
Jmax
OH
+ (P
(P
),
, in degree Celsius, may be calculated using
) must never exceed the values given in
52.
Dmax
Dmax
Conditions
T
A
= P
= +25 °C
x Θ
INTmax
JA
)
STM8L151x2, STM8L151x3
+ P
I/Omax
Maximum
value
)
2000
Class
500
II
(1)
Unit
V