STM8L151G3U6 STMicroelectronics, STM8L151G3U6 Datasheet - Page 78
STM8L151G3U6
Manufacturer Part Number
STM8L151G3U6
Description
IC MCU 8BIT 8KB FLASH 28UFQFPN
Manufacturer
STMicroelectronics
Series
STM8L EnergyLiter
Datasheet
1.STM8L151G3U6.pdf
(110 pages)
Specifications of STM8L151G3U6
Core Processor
STM8
Core Size
8-Bit
Speed
16MHz
Connectivity
I²C, IrDA, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, DMA, IR, POR, PWM, WDT
Number Of I /o
26
Program Memory Size
8KB (8K x 8)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 18x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
28-UFQFN
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-11494
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STM8L151G3U6
Manufacturer:
STMicroelectronics
Quantity:
10 000
Part Number:
STM8L151G3U6
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STM8L151G3U6TR
Manufacturer:
SAMSUNG
Quantity:
340
Company:
Part Number:
STM8L151G3U6TR
Manufacturer:
STMicroelectronics
Quantity:
10 000
Electrical parameters
Table 38.
1. Data based on characterization results, not tested in production.
2. 200 mV min.
3. Data guaranteed by design, not tested in production.
78/110
R
V
V
V
V
V
Symbol
OL(NRST)
PU(NRST)
NF(NRST)
IH(NRST)
V
IL(NRST)
F(NRST)
HYST
NRST pin characteristics
NRST pin
Subject to general operating conditions for V
Figure 30. Typical NRST pull-up resistance R
NRST input low level voltage
NRST input high level voltage
NRST output low level voltage
NRST input hysteresis
NRST pull-up equivalent resistor
(1)
NRST input filtered pulse
NRST input not filtered pulse
Parameter
(3)
(3)
(1)
(3)
(1)
(1)
Doc ID 018780 Rev 2
I
for 2.7 V ≤ V
I
for V
OL
OL
= 2 mA
= 1.5 mA
DD
Conditions
< 2.7 V
DD
DD
and T
≤ 3.6 V
PU
vs V
A
unless otherwise specified.
10%V
DD
Min
V
300
1.4
30
(2)
SS
DD
STM8L151x2, STM8L151x3
Typ
45
Max
V
0.8
0.4
60
50
DD
Unit
mV
kΩ
ns
V