BGF1801-10 NXP Semiconductors, BGF1801-10 Datasheet - Page 4

• Manufacturer Part Number: BGF1801-10
• Manufacturer: NXP Semiconductors
• Type: Power Amplifierr

Specifications of BGF1801-10

• Number Of Channels: 1
• Frequency (max): 1.88GHz
• Output Power: 40@1880MHzdBm
• Power Supply Requirement: Single
• Single Supply Voltage (typ): 26V
• Package Type: SOT-365C
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Operating Temperature Classification: Commercial
• Operating Temp Range: -20C to 85C
• Pin Count: 3
• Mounting: Screw
• Lead Free Status / Rohs Status: Not Compliant

Philips Semiconductors
2003 Dec 15
handbook, halfpage
EVM rms
GSM1800 EDGE power module
f = 1843 MHz.
Fig.2
f = 1843 MHz.
Fig.4
(%)
(dB)
G
1.5
0.5
27
26
25
24
p
2
1
0
0
0
GSM EDGE power gain and efficiency as
functions of load power; typical values.
GSM EDGE rms EVM as a function of
average load power; typical values.
2
2
G
p
D
4
4
6
6
P
P L (AV) W
L(AV)
mle335
MLE337
(W)
8
8
30
20
10
0
(%)
D
4
handbook, halfpage
handbook, halfpage
f = 1843 MHz.
Fig.3
f = 1843 MHz.
Fig.5
ACPR
(dBc)
EVM
(%)
61
63
65
67
6
4
2
0
0
0
GSM EDGE ACPR at 400 kHz as a function
of load power; typical values.
GSM EDGE peak EVM as function of
average load power; typical values.
2
2
4
4
BGF1801-10
Product specification
6
6
P L (AV) (W)
P L (AV) (W)
MLE336
MLE338
8
8