GP1S58VJ000F Sharp Electronics, GP1S58VJ000F Datasheet - Page 5

• Manufacturer Part Number: GP1S58VJ000F
• Manufacturer: Sharp Electronics
• Type: Transmissiver

Specifications of GP1S58VJ000F

• Number Of Elements: 1
• Output Device: Phototransistor
• Gap Width: 5mm
• Slit Width: 0.5mm
• Reverse Breakdown Voltage: 6V
• Collector-emitter Voltage: 35V
• Forward Current: 50mA
• Collector Current (dc) (max): 20mA
• Power Dissipation: 75mW
• Fall Time: 20000ns
• Rise Time: 15000ns
• Pin Count: 4
• Mounting: Through Hole
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Fig.1 Forward Current vs. Ambient
Fig.3 Peak Forward Current vs.
Fig.5 Collector Current vs.
1 000
Temperature
Duty Ratio
Forward Current
100
60
50
40
30
20
10
10
−25
0
0
5
4
3
2
1
0
10
V
T
−2
a
CE
=25˚C
10
0
= 5V
Ambient temperature T
Forward current I
20
25
Duty ratio
10
Pulse width≤100μs
T
a
50
=25˚C
−1
30
F
(mA)
a
(˚C)
75 85
40
100
50
1
5
Fig.2 Collector Power Dissipation vs.
Fig.4 Forward Current vs.
Fig.6 Collector Current vs.
Ambient Temperature
Forward Voltage
Collector-emitter Voltage
120
100
100
0
80
75
60
40
20
15
10
5
4
3
2
1
0
1
0
−25
0
T
1
a
=25˚C
0.5
T
2
a
0
=75˚C
Ambient temperature T
Collector-emitter V
50˚C
3
Foward voltage V
1
4
25
1.5
5
I
F
2
6
50
=50mA
CE
F
40mA
30mA
20mA
10mA
(V)
(V)
7
− 25˚C
a
2.5
25˚C
(˚C)
0˚C
Sheet No.: D2-A02702EN
GP1S58VJ000F
8
75 85
3
9
10
100
3.5