MRF175GU M/A-Com Technology Solutions, MRF175GU Datasheet - Page 16

• Manufacturer Part Number: MRF175GU
• Description: Trans MOSFET N-CH 65V 26A 5-Pin Case 375-04
• Manufacturer: M/A-Com Technology Solutions

Specifications of MRF175GU

• Package: 5Case 375-04
• Channel Mode: Enhancement
• Channel Type: N
• Maximum Continuous Drain Current: 26 A
• Maximum Drain Source Voltage: 65 V
• Maximum Gate Source Voltage: ±40 V

16
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
MRF175GU
MRF175GV
The RF MOSFET Line
200/150W, 500MHz, 28V
COM Application Note AN211A, FETs in Theory and Prac-
tice, is suggested reading for those not familiar with the con-
struction and characteristics of FETs.
gain, low noise, simple bias systems, relative immunity from
thermal runaway, and the ability to withstand severely mis-
matched loads without suffering damage. Power output can
be varied over a wide range with a low power dc control sig-
nal.
DC BIAS
fore, does not conduct when drain voltage is applied. Drain
current flows when a positive voltage is applied to the gate.
The major advantages of RF power FETs include high
The MRF175G is an enhancement mode FET and, there-
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
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RF power FETs require forward bias for optimum perform-
ance. The value of quiescent drain current (I
at I
mumvalue of I
amplification, I
critical parameters. The gate is a dc open circuit and draws
no current. Therefore, the gate bias circuit may be just a
simple resistive divider network. Some applications may
require a more elaborate bias sytem.
GAIN CONTROL
rated value down to zero (negative gain) by varying the dc
gate voltage. This feature facilitates the design of manual
gain control, AGC/ALC and modulation systems.
Visit www.macomtech.com for additional data sheets and product information.
for many applications. The MRF175G was characterized
Power output of the MRF175G may be controlled from its
DQ
= 100 mA, each side, which is the suggested mini-
DQ
DQ
. For special applications such as linear
may have to be selected to optimize the
M/A-COM Products
Released - Rev. 07.07
DQ
) is not critical