MRF175GU M/A-Com Technology Solutions, MRF175GU Datasheet

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MRF175GU

Manufacturer Part Number
MRF175GU
Description
Trans MOSFET N-CH 65V 26A 5-Pin Case 375-04
Manufacturer
M/A-Com Technology Solutions
Datasheet
1.MRF175GU.pdf (16 pages)

Specifications of MRF175GU

Package
5Case 375-04
Channel Mode
Enhancement
Channel Type
N
Maximum Continuous Drain Current
26 A
Maximum Drain Source Voltage
65 V
Maximum Gate Source Voltage
±40 V

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MRF175GU
Manufacturer:
SYNERGY
Quantity:
5 000
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
MRF175GU
MRF175GV
The RF MOSFET Line
200/150W, 500MHz, 28V
Designed for broadband commercial and military applications using push
pull circuits at frequencies to 500 MHz. The high power, high gain and
broadband performance of these devices makes possible solid state
transmitters for FM broadcast or TV channel frequency bands.
N–Channel enhancement mode
•
•
•
•
Guaranteed performance
100% ruggedness tested at rated output power
Low thermal resistance
Low C
MRF175GV @ 28 V, 225 MHz (“V” Suffix)
rss
Output power — 200 W
Power gain — 14 dB typ
Efficiency — 65% typ`
— 20 pF typ @ V
DS
= 28 V
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
Product Image
CASE 375–04, STYLE 2
M/A-COM Products
Released - Rev. 07.07

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MRF175GU Summary of contents

Page 1

... MRF175GU MRF175GV The RF MOSFET Line 200/150W, 500MHz, 28V Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. ...

Page 2

... MRF175GU MRF175GV The RF MOSFET Line 200/150W, 500MHz, 28V 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 3

... MRF175GU MRF175GV The RF MOSFET Line 200/150W, 500MHz, 28V 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 4

... MRF175GU MRF175GV The RF MOSFET Line 200/150W, 500MHz, 28V 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 5

... MRF175GU MRF175GV The RF MOSFET Line 200/150W, 500MHz, 28V 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 6

... MRF175GU MRF175GV The RF MOSFET Line 200/150W, 500MHz, 28V 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 7

... MRF175GU MRF175GV The RF MOSFET Line 200/150W, 500MHz, 28V 7 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 8

... MRF175GU MRF175GV The RF MOSFET Line 200/150W, 500MHz, 28V 8 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 9

... MRF175GU MRF175GV The RF MOSFET Line 200/150W, 500MHz, 28V 9 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 10

... MRF175GU MRF175GV The RF MOSFET Line 200/150W, 500MHz, 28V 10 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 11

... MRF175GU MRF175GV The RF MOSFET Line 200/150W, 500MHz, 28V 11 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 12

... MRF175GU MRF175GV The RF MOSFET Line 200/150W, 500MHz, 28V 12 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 13

... MRF175GU MRF175GV The RF MOSFET Line 200/150W, 500MHz, 28V 13 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development ...

Page 14

... MRF175GU MRF175GV The RF MOSFET Line 200/150W, 500MHz, 28V MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between the terminals. The metal oxide gate structure de- termines the capacitors from gate–to–drain (C to–source (C ). The PN junction formed during the fabrica- gs tion of the MOSFET results in a junction capacitance from drain– ...

Page 15

... MRF175GU MRF175GV The RF MOSFET Line 200/150W, 500MHz, 28V MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between the terminals. The metal oxide gate structure de- termines the capacitors from gate–to–drain (C to–source (C ). The PN junction formed during the fabrica- gs tion of the MOSFET results in a junction capacitance from drain– ...

Page 16

... MRF175GU MRF175GV The RF MOSFET Line 200/150W, 500MHz, 28V COM Application Note AN211A, FETs in Theory and Prac- tice, is suggested reading for those not familiar with the con- struction and characteristics of FETs. The major advantages of RF power FETs include high gain, low noise, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mis- matched loads without suffering damage ...

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