H27U518S2CTP-BC HYNIX SEMICONDUCTOR, H27U518S2CTP-BC Datasheet - Page 32

58T1892

H27U518S2CTP-BC

Manufacturer Part Number
H27U518S2CTP-BC
Description
58T1892
Manufacturer
HYNIX SEMICONDUCTOR
Datasheet

Specifications of H27U518S2CTP-BC

Memory Type
Flash - NAND
Memory Size
512Mbit
Memory Configuration
64M X 8
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
0°C To +70°C
Rohs Compliant
Yes

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
H27U518S2CTP-BC
Manufacturer:
HYNIX
Quantity:
4 000
1PrePreliminaryeee
H27U518S2C Series
512 Mbit (64 M x 8 bit) NAND Flash
Devices with Bad Blocks have the same quality level and the same AC and DC characteristics as devices where all the
blocks are valid. A Bad Block does not affect the performance of valid blocks because it is isolated from the bit line and
common source line by a select transistor. The devices are supplied with all the locations inside valid blocks erased(FFh).
The Bad Block Information is written prior to shipping. Any block where the 1st Byte in the spare area of the 1st or 2nd th
page (if the 1st page is Bad) does not contain FFh is a Bad Block. The Bad Block Information must be read before any
erase is attempted as the Bad Block Information may be erased. For the system to be able to recognize the Bad Blocks
based on the original information it is recommended to create a Bad Block table following the flowchart shown in Figure
22. The 1st block, which is placed on 00h block address is guaranteed to be a valid block.
Figure 22 : Bad Block Management Flowchart
Bad Block Replacement
Rev 1.0 / Dec. 2008
32

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