A25L010-F AMIC, A25L010-F Datasheet - Page 6
![58T1296](/photos/40/61/406111/ge8dip-40_sml.jpg)
A25L010-F
Manufacturer Part Number
A25L010-F
Description
58T1296
Manufacturer
AMIC
Datasheet
1.A25L010-F.pdf
(44 pages)
Specifications of A25L010-F
Memory Type
Flash
Memory Size
1Mbit
Memory Configuration
1M X 1
Interface Type
Serial, SPI
Clock Frequency
100MHz
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
DIP
No. Of Pins
8
Rohs Compliant
Yes
OPERATING FEATURES
Page Programming
To program one data byte, two instructions are required: Write
Enable (WREN), which is one byte, and a Page Program (PP)
sequence, which consists of four bytes plus data. This is
followed by the internal Program cycle (of duration t
To spread this overhead, the Page Program (PP) instruction
allows up to 256 bytes to be programmed at a time (changing
bits from 1 to 0), provided that they lie in consecutive
addresses on the same page of memory.
Sector Erase, Block Erase, and Chip Erase
The Page Program (PP) instruction allows bits to be reset
from 1 to 0. Before this can be applied, the bytes of memory
need to have been erased to all 1s (FFh). This can be
achieved, a sector at a time, using the Sector Erase (SE)
instruction, a block at a time, using the Block Erase (BE)
instruction, or throughout the entire memory, using the Chip
Erase (CE) instruction. This starts an internal Erase cycle (of
duration t
The Erase instruction must be preceded by a Write Enable
(WREN) instruction.
Polling During a Write, Program or Erase Cycle
A further improvement in the time to Write Status Register
(WRSR), Program (PP) or Erase (SE, BE, or CE) can be
achieved by not waiting for the worst case delay (t
t
Status Register so that the application program can monitor
its value, polling it to establish when the previous Write cycle,
Program cycle or Erase cycle is complete.
Active Power, Stand-by Power and Deep
Power-Down Modes
When Chip Select (
the Active Power mode.
When Chip Select (
could remain in the Active Power mode until all internal cycles
have completed (Program, Erase, Write Status Register). The
device then goes in to the Stand-by Power mode. The device
consumption drops to I
The Deep Power-down mode is entered when the specific
instruction (the Deep Power-down Mode (DP) instruction) is
executed. The device consumption drops further to I
device remains in this mode until another specific instruction
(the Release from Deep Power-down Mode and Read
Electronic Signature (RES) instruction) is executed.
All other instructions are ignored while the device is in the
Deep Power-down mode. This can be used as an extra
software protection mechanism, when the device is not in
active use, to protect the device from inadvertent Write,
Program or Erase instructions.
(December, 2010, Version 1.6)
BE
, t
CE
). The Write In Progress (WIP) bit is provided in the
SE,
t
BE,
or t
CE
S
S
).
) is Low, the device is enabled, and in
CC1
) is High, the device is disabled, but
.
PP
W
, t
).
CC2
PP
. The
, t
SE
,
5
Status Register
The Status Register contains a number of status and control
bits that can be read or set (as appropriate) by specific
instructions.
WIP bit. The Write In Progress (WIP) bit indicates whether
the memory is busy with a Write Status Register, Program or
Erase cycle.
WEL bit. The Write Enable Latch (WEL) bit indicates the
status of the internal Write Enable Latch.
BP2, BP1, BP0 bits. The Block Protect (BP2, BP1, BP0) bits
are non-volatile. They define the size of the area to be
software protected against Program and Erase instructions.
SRWD bit. The Status Register Write Disable (SRWD) bit is
operated in conjunction with the Write Protect (
The Status Register Write Disable (SRWD) bit and Write
Protect (
Protected mode. In this mode, the non-volatile bits of the
Status Register (SRWD, BP2, BP1, BP0) become read-only
bits.
Protection Modes
The environments where non-volatile memory devices are
used can be very noisy. No SPI device can operate correctly
in the presence of excessive noise. To help combat this, the
A25L020/A25L010/A25L512
protection mechanisms:
- Power-up
- Write Disable (WRDI) instruction completion
- Write Status Register (WRSR) instruction completion
- Page Program (PP) instruction completion
- Sector Erase (SE) instruction completion
- Block Erase (BE) instruction completion
- Chip Erase (CE) instruction completion
Power-On Reset and an internal timer (t
protection against inadvertent changes while the power
supply is outside the operating specification.
Program, Erase and Write Status Register instructions are
checked that they consist of a number of clock pulses that
is a multiple of eight, before they are accepted for
execution.
All instructions that modify data must be preceded by a
Write Enable (WREN) instruction to set the Write Enable
Latch (WEL) bit. This bit is returned to its reset state by
the following events:
The Block Protect (BP2, BP1, BP0) bits allow part of the
memory to be configured as read-only. This is the
Software Protected Mode (SPM).
The Write Protect (
(BP2, BP1, BP0) bits and Status Register Write Disable
(SRWD) bit to be protected. This is the Hardware
Protected Mode (HPM).
In addition to the low power consumption feature, the
Deep Power-down mode offers extra software protection
from inadvertent Write, Program and Erase instructions,
as all instructions are ignored except one particular
instruction
instruction).
A25L020/A25L010/A25L512 Series
W
) signal allow the device to be put in the Hardware
(the
Release
W
AMIC Technology Corp.
) signal allows the Block Protect
boasts
from
the
Deep
PUW
following
) can provide
Power-down
W
) signal.
data