H57V2562GTR-75C HYNIX SEMICONDUCTOR, H57V2562GTR-75C Datasheet - Page 13

• Manufacturer Part Number: H57V2562GTR-75C
• Description: 58T1903
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H57V2562GTR-75C

• Memory Type: SDRAM
• Memory Configuration: 16M X 16
• Access Time: 6ns
• Interface Type: LVTTL
• Memory Case Style: TSOPII
• No. Of Pins: 54
• Operating Temperature Range: 0°C To +70°C
• Memory Size: 256 Mbit
• Rohs Compliant: Yes

BASIC FUNCTIONAL DESCRIPTION
Mode Register
OP Code
Rev 1.0 / Dec. 2010
CAS Latency
BA1
A6
A9
0
0
0
0
0
1
1
1
1
0
1
BA0
A5
0
0
0
1
1
0
0
1
1
Burst Read and Single Write
A12
Burst Read and Burst Write
A4
0
1
0
1
0
1
0
1
0
Write Mode
A11
0
CAS Latency
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
A10
0
2
3
OP Code
A9
A8
0
A7
0
Burst Length
A2
0
0
0
0
1
1
1
1
Synchronous DRAM Memory 256Mbit
A6
CAS Latency
A1
0
0
1
1
0
0
1
1
Burst Type
A5
A0
0
1
0
1
0
1
0
1
A3
0
1
A4
Reserved
Reserved
Reserved
Full page
A3 = 0
H57V2562GTR Series
Burst Type
A3
BT
Sequential
Interleave
1
2
4
8
Burst Length
A2
Burst Length
Reserved
Reserved
Reserved
Reserved
A1
A3=1
1
2
4
8
A0
13