FM18L08-70-S Ramtron, FM18L08-70-S Datasheet - Page 4

• Manufacturer Part Number: FM18L08-70-S
• Description: F-RAM 256K (32Kx8) 70ns 3V
• Manufacturer: Ramtron

Specifications of FM18L08-70-S

• Memory Size: 256 KB
• Organization: 32 K x 8
• Interface: Parallel
• Access Time: 70 ns
• Operating Supply Voltage: 3 V to 3.6 V
• Operating Temperature Range: - 40 C to + 85 C
• Package / Case: SOIC-28
• Mounting Style: SMD/SMT
• Lead Free Status / Rohs Status: No

must remain high for at least the minimum precharge
timing specification.
The user dictates the beginning of this operation since
a precharge will not begin until /CE rises. However,
the device has a maximum /CE low time specification
that must be satisfied.
FRAM Design Considerations
When designing with FRAM for the first time, users
of SRAM will recognize a few minor differences.
First, bytewide FRAM memories latch each address
on the falling edge of chip enable. This allows the
address bus to change after starting the memory
access. Since every access latches the memory
Rev. 3.5
Sept. 2009
signaling
signaling
SRAM
FRAM
Address
Address
Figure 2. Memory Address Relationships
Valid Memory Signaling Relationship
Data
Data
Invalid Memory Signaling Relationship
CE
CE
Address 1
Address 1
Data 1
address on the falling edge of /CE, users cannot
ground it as they might with SRAM.
Users who are modifying existing designs to use
FRAM should examine the memory controller for
timing compatibility of address and control pins.
Each memory access must be qualified with a low
transition of /CE. In many cases, this is the only
change
relationships is shown in Figure 2 below. Also shown
is a common SRAM signal relationship that will not
work for the FM18L08.
The reason for /CE to strobe for each address is two-
fold: it latches the new address and creates the
necessary precharge period while /CE is high.
Data 1
required.
Address 2
Address 2
An example
Data 2
Data 2
of the signal
FM18L08
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