SI4412ADY-T1 Vishay, SI4412ADY-T1 Datasheet - Page 4

• Manufacturer Part Number: SI4412ADY-T1
• Description: MOSFET Small Signal 30V 8A 2.5W
• Manufacturer: Vishay

Specifications of SI4412ADY-T1

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.8 A
• Power Dissipation: 1.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Si4412ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.01
0.01
0.4
0.2
0.0
0.1
0.1
- 50
2
1
2
1
10
10
www.vishay.com/ppg?71105.
-4
-4
0.2
0.05
0.02
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
Duty Cycle = 0.5
0.1
- 25
Single Pulse
0
Threshold Voltage
T
J
10
- Temperature (°C)
25
-3
I
D
10
50
= 250 µA
-3
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
75
10
100
-2
125
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
150
-2
10
-1
10
1
50
40
30
20
10
-1
0
10
-3
10
-2
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Single Pulse Power
P
10
DM
JM
-1
- T
Time (s)
1
t
A
1
S09-0868-Rev. C, 18-May-09
= P
t
2
1
DM
Document Number: 71105
Z
thJA
thJA
100
t
t
1
2
(t)
= 80 °C/W
10
100
10
600
600