SI4412ADY-T1 Vishay, SI4412ADY-T1 Datasheet - Page 3

• Manufacturer Part Number: SI4412ADY-T1
• Description: MOSFET Small Signal 30V 8A 2.5W
• Manufacturer: Vishay

Specifications of SI4412ADY-T1

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.8 A
• Power Dissipation: 1.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71105
S09-0868-Rev. C, 18-May-09
0.05
0.04
0.03
0.02
0.01
0.00
10
30
10
8
6
4
2
0
1
0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 2 A
0.2
= 15 V
On-Resistance vs. Drain Current
6
V
V
SD
4
GS
Q
- Source-to-Drain Voltage (V)
g
0.4
= 4.5 V
I
- Total Gate Charge (nC)
D
- Drain Current (A)
T
12
Gate Charge
J
= 150 °C
0.6
8
18
0.8
T
12
J
V
= 25 °C
GS
24
1.0
= 10 V
30
16
1.2
1200
1000
0.10
0.08
0.06
0.04
0.02
0.00
800
600
400
200
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
C
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
rss
V
I
- 25
D
GS
= 8 A
C
= 10 V
2
6
iss
V
V
DS
T
0
GS
C
J
oss
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
Capacitance
25
12
4
50
Vishay Siliconix
Si4412ADY
18
6
75
I
www.vishay.com
D
100
= 3.9 A
24
8
125
150
10
30
3