SI4818DY-T1 Vishay, SI4818DY-T1 Datasheet - Page 8

• Manufacturer Part Number: SI4818DY-T1
• Description: MOSFET Small Signal 30V 6.3/9.5A
• Manufacturer: Vishay

Specifications of SI4818DY-T1

• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 6.3 A
• Power Dissipation: 1.25 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No RoHS Version Available

Si4818DY
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71122.
www.vishay.com
8
0.0001
0.001
0.01
0.1
20
10
1
0
Reverse Current vs. Junction Temperature
25
50
T
J
30 V
- Temperature (°C)
75
24 V
100
200
160
120
80
40
0
0
125
6
150
V
DS
C
oss
- Drain-to-Source Voltage (V)
Capacitance
12
18
10
1
0
24
0.3
T
30
J
V
= 150 °C
Forward Voltage Drop
F
- Forward Voltage Drop (V)
0.6
T
S09-0867-Rev. C, 18-May-09
J
= 25 °C
Document Number: 71122
0.9
1.2
1.5