SI4818DY-T1 Vishay, SI4818DY-T1 Datasheet - Page 7
![no-image](/images/manufacturer_photos/0/6/697/vishay_sml.jpg)
SI4818DY-T1
Manufacturer Part Number
SI4818DY-T1
Description
MOSFET Small Signal 30V 6.3/9.5A
Manufacturer
Vishay
Datasheet
1.SI4818DY-T1-E3.pdf
(9 pages)
Specifications of SI4818DY-T1
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.022 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
6.3 A
Power Dissipation
1.25 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
No RoHS Version Available
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4818DY-T1
Manufacturer:
VISHAY
Quantity:
130 000
Company:
Part Number:
SI4818DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 933
Part Number:
SI4818DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71122
S09-0867-Rev. C, 18-May-09
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
0.05
0.05
0.02
0.02
0.1
Duty Cycle = 0.5
0.2
0.2
Duty Cycle = 0.5
0.1
Single Pulse
Single Pulse
10
-3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
10
1
-1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
DM
JM
- T
A
t
1
1
= P
t
2
DM
Vishay Siliconix
Z
thJA
thJA
100
(t)
t
t
1
2
Si4818DY
= 82 °C/W
www.vishay.com
600
10
7