SI4818DY-T1 Vishay, SI4818DY-T1 Datasheet - Page 7

• Manufacturer Part Number: SI4818DY-T1
• Description: MOSFET Small Signal 30V 6.3/9.5A
• Manufacturer: Vishay

Specifications of SI4818DY-T1

• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.022 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 6.3 A
• Power Dissipation: 1.25 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No RoHS Version Available

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71122
S09-0867-Rev. C, 18-May-09
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
0.05
0.05
0.02
0.02
0.1
Duty Cycle = 0.5
0.2
0.2
Duty Cycle = 0.5
0.1
Single Pulse
Single Pulse
10
-3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
10
1
-1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
DM
JM
- T
A
t
1
1
= P
t
2
DM
Vishay Siliconix
Z
thJA
thJA
100
(t)
t
t
1
2
Si4818DY
= 82 °C/W
www.vishay.com
600
10
7