SI6923DQ-T1 Vishay, SI6923DQ-T1 Datasheet - Page 3

• Manufacturer Part Number: SI6923DQ-T1
• Description: MOSFET Small Signal 20V 3.5A 1.2W
• Manufacturer: Vishay

Specifications of SI6923DQ-T1

• Configuration: Single Dual Source
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 1200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSSOP-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Document Number: 70792
S-56941—Rev. B, 02-Nov-98
0.20
0.16
0.12
0.08
0.04
4.5
3.6
2.7
1.8
0.9
30
24
18
12
6
0
0
0
0
0
0
V
I
D
DS
= 3.5 A
On-Resistance vs. Drain Current
V
= 10 V
2
6
3
DS
Q
V
Output Characteristics
g
GS
– Drain-to-Source Voltage (V)
I
V
D
– Total Gate Charge (nC)
GS
= 2.5 V
– Drain Current (A)
Gate Charge
12
4
6
= 5 thru 3,5 V
2.5 V
18
6
9
3 V
V
GS
2 V
1.5 V
= 4.5 V
24
12
8
10
30
15
New Product
2500
2000
1500
1000
500
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
20
16
12
8
4
0
0
–50
0
0
On-Resistance vs. Junction Temperature
C
rss
–25
V
I
D
GS
0.5
= 3.5 A
V
V
= 4.5 V
4
DS
GS
T
T
C
Transfer Characteristics
C
J
0
oss
– Junction Temperature ( C)
– Drain-to-Source Voltage (V)
= 125 C
25 C
– Gate-to-Source Voltage (V)
1.0
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Capacitance
25
8
1.5
50
Vishay Siliconix
C
iss
12
75
2.0
–55 C
Si6923DQ
100
16
2.5
125
150
3.0
20
2-3