SI6923DQ-T1 Vishay, SI6923DQ-T1 Datasheet
SI6923DQ-T1
Specifications of SI6923DQ-T1
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SI6923DQ-T1 Summary of contents
Page 1
... I ( Symbol stg Device Symbol MOSFET Schottky thJA thJA MOSFET Schottky Si6923DQ Vishay Siliconix K A Limit Unit – 3.5 2 –1.25 1.5 30 1.2 0. 1.0 0.64 –55 to 150 C Typical Maximum Unit 105 125 C/W C/W C/W 115 130 www.vishay.com FaxBack 408-970-5600 2-1 ...
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... Si6923DQ Vishay Siliconix Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain Source On State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge ...
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... 2500 2000 1500 1000 = 4 500 On-Resistance vs. Junction Temperature 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 –50 Si6923DQ Vishay Siliconix Transfer Characteristics T = 125 –55 C 0.5 1.0 1.5 2.0 2.5 3.0 V – Gate-to-Source Voltage (V) GS Capacitance C iss C oss rss – Drain-to-Source Voltage (V) ...
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... Si6923DQ Vishay Siliconix Source-Drain Diode Forward Voltage 150 0.00 0.25 0.50 0.75 1.00 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0 250 A 0.6 D 0.4 0.2 –0.0 –0.2 –0.4 –0.6 –50 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...
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... Capacitance 250 200 150 C iss 100 – Reverse Voltage (V KA –2 – Square Wave Pulse Duration (sec) Si6923DQ Vishay Siliconix Forward Voltage Drop T = 150 0.1 0.2 0.3 0.4 0.5 0.6 V – Forward Voltage Drop ( Notes Duty Cycle ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...