SI4420DY-T1 Vishay, SI4420DY-T1 Datasheet - Page 3

• Manufacturer Part Number: SI4420DY-T1
• Description: MOSFET Small Signal 30V 12.5A 2.5W
• Manufacturer: Vishay

Specifications of SI4420DY-T1

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.013 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.5 A
• Power Dissipation: 1.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Document Number: 71818
S-31990—Rev. F, 13-Oct-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.030
0.024
0.018
0.012
0.006
0.000
10
50
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 13.5 A
0.2
10
On-Resistance vs. Drain Current
= 15 V
10
V
SD
Q
T
g
J
− Source-to-Drain Voltage (V)
I
= 150_C
0.4
− Total Gate Charge (nC)
D
20
− Drain Current (A)
Gate Charge
20
0.6
30
V
V
GS
GS
= 4.5 V
= 10 V
30
0.8
40
T
J
= 25_C
40
1.0
50
1.2
50
60
5000
4000
3000
2000
1000
0.05
0.04
0.03
0.02
0.01
0.00
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
−25
D
GS
C
= 13.5 A
rss
= 10 V
4
T
V
V
2
0
J
GS
DS
− Junction Temperature (_C)
C
oss
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
25
Capacitance
8
Vishay Siliconix
50
4
I
D
= 13.5 A
12
75
C
Si4420DY
iss
100
6
16
www.vishay.com
125
150
20
8
3