SI4420DY-T1 Vishay, SI4420DY-T1 Datasheet - Page 2

• Manufacturer Part Number: SI4420DY-T1
• Description: MOSFET Small Signal 30V 12.5A 2.5W
• Manufacturer: Vishay

Specifications of SI4420DY-T1

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.013 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.5 A
• Power Dissipation: 1.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Si4420DY
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
50
40
30
20
10
0
0
b
Parameter
1
V
a
a
V
DS
GS
Output Characteristics
− Drain-to-Source Voltage (V)
a
= 10 thru 4 V
2
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
3
Symbol
V
r
r
I
DS(
DS(on)
t
t
I
GS(th)
I
I
V
D(on)
Q
Q
d(off)
GSS
Q
d(on)
DSS
DSS
g
Q
R
t
SD
t
t
rr
fs
gs
gd
r
f
gt
g
g
3 V
)
4
5
V
V
V
DS
DS
I
DS
D
DS
^ 1 A, V
= 15 V, V
I
= 15 V, V
F
V
= 30 V, V
V
V
V
V
V
V
V
V
DS
= 2.3 A, di/dt = 100 A/ms
I
DS
DS
DS
Test Condition
GS
S
DD
DD
DS
GS
= 2.3 A, V
= 0 V, V
= V
,
w 5 V, V
= 15 V, I
= 30 V, V
= 10 V, I
= 15 V, R
= 15 V, R
= 4.5 V, I
GEN
GS
GS
GS
GS
GS
, I
= 10 V, I
= 10 V, R
GS
= 5 V, I
= 0 V, T
D
D
D
GS
GS
GS
= 250 mA
D
L
L
= 13.5 A
= "20 V
=13.5 A
= 15 W
= 15 W
= 11 A
= 10 V
= 0 V
,
= 0 V
D
D
D
J
= 13.5 A
g
= 55_C
= 13.5 A
50
40
30
20
10
= 6 W
0
0.0
0.5
V
GS
1.0
Transfer Characteristics
− Gate-to-Source Voltage (V)
Min
1.0
0.5
30
1.5
T
2.0
C
25_C
0.0075
0.010
Typ
= 125_C
2.0
9.5
2.1
50
29
58
12
22
13
82
30
50
S-31990—Rev. F, 13-Oct-03
Document Number: 71818
2.5
"100
Max
0.009
0.013
3.0
125
3.0
1.1
4.6
45
90
35
20
45
75
1
5
−55_C
3.5
Unit
nC
nC
nA
mA
mA
ns
W
W
W
V
A
S
V
4.0