SI3851DV-T1 Vishay, SI3851DV-T1 Datasheet - Page 5

• Manufacturer Part Number: SI3851DV-T1
• Description: MOSFET Small Signal 30V 1.8A 1.15W
• Manufacturer: Vishay

Specifications of SI3851DV-T1

• Configuration: Single
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.6 A
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-6
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No RoHS Version Available

MOSFET TYPICAL CHARACTERISTICS T
SCHOTTKY TYPICAL CHARACTERISTICS T
Document Number: 70978
S09-2275-Rev. B, 02-Nov-09
0.0001
0.001
0.01
0.1
10
20
0.01
1
0.1
0
2
1
10
Reverse Current vs. Junction Temperature
-4
0.02
0.05
0.2
0.1
Duty Cycle = 0.5
25
T
Single Pulse
J
- Junction Temperature (°C)
30 V
50
10
10 V
75
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
100
125
100
75
50
25
0
0
125
V
I
D
GS
= 1.8 A
= 10 V
6
Square Wave Pulse Duration (s)
10
A
150
-2
V
= 25 °C, unless otherwise noted
KA
A
Capacitance
- Reverse Voltage (V)
= 25 °C, unless otherwise noted
12
18
10
0.1
-1
5
1
24
0
T
30
J
0.2
= 150 °C
V
Forward Voltage Drop
F
- Forward Voltage Drop (V)
0.4
1
T
Vishay Siliconix
J
= 25 °C
0.6
Si3851DV
www.vishay.com
0.8
1
0
1.0
5