SI3851DV-T1 Vishay, SI3851DV-T1 Datasheet
SI3851DV-T1
Specifications of SI3851DV-T1
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SI3851DV-T1 Summary of contents
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... 2.85 mm Ordering Information: Si3851DV-T1-E3 (Lead (Pb)-free) Si3851DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage (MOSFET and Schottky) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (T = 150 °C) (MOSFET) J Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) ...
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... Si3851DV Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter t ≤ Junction-to-Ambient Steady State Junction-to-Foot Steady State MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge ...
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... On-Resistance vs. Drain Current 1 Total Gate Charge (nC) g Gate Charge Document Number: 70978 S09-2275-Rev. B, 02-Nov- °C, unless otherwise noted Si3851DV Vishay Siliconix ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 300 240 C iss 180 120 C oss 60 C rss Drain-to-Source Voltage (V) DS Capacitance 1.8 ...
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... Si3851DV Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 150 ° 0.1 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.6 0.4 0 250 µA D 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com °C, unless otherwise noted ...
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... Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot = 25 °C, unless otherwise noted A 100 125 150 125 1 100 Reverse Voltage (V) KA Capacitance Si3851DV Vishay Siliconix - 150 ° °C J 0.1 0 0.2 0.4 0 Forward Voltage Drop (V) F Forward Voltage Drop 24 30 www.vishay.com 1 0 0.8 1 ...
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... Si3851DV Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...