SI6963DQ-T1 Vishay, SI6963DQ-T1 Datasheet - Page 2

no-image

SI6963DQ-T1

Manufacturer Part Number
SI6963DQ-T1
Description
MOSFET Small Signal 20V 3.5A 1W
Manufacturer
Vishay
Datasheet

Specifications of SI6963DQ-T1

Configuration
Dual Dual Source
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
3 A
Power Dissipation
830 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TSSOP-8
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
No

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI6963DQ-T1
Manufacturer:
VISHAY
Quantity:
4 519
Part Number:
SI6963DQ-T1
Manufacturer:
VISHAY
Quantity:
2 500
Part Number:
SI6963DQ-T1
Manufacturer:
SILIVONIX
Quantity:
8 000
Part Number:
SI6963DQ-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI6963DQ-T1
Quantity:
3 000
Si6963DQ
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
30
24
18
12
6
0
0
b
Parameter
2
V
a
a
DS
V
Output Characteristics
GS
a
- Drain-to-Source Voltage (V)
= 5 thru 3.5 V
3 V
4
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
2.5 V
6
Symbol
V
r
r
I
DS(on)
t
t
I
I
I
GS(th)
V
D(on)
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
t
SD
t
t
rr
fs
gs
gd
r
f
g
2 V
8
10
New Product
V
DS
I
V
D
DS
^ - 1 A, V
= - 10 V, V
I
V
F
V
V
DS
= - 20 V, V
V
V
V
= - 1.25 A, di/dt = 100 A/ms
V
I
V
V
DS
GS
GS
S
DS
DS
DS
DD
DD
Test Condition
= 0 V, V
= - 1.25 A, V
w - 5 V, V
= - 2.5 V, I
= V
= - 4.5 V, I
= - 10 V, I
= - 20 V, V
= - 10 V, R
= - 10 V, R
GEN
GS
GS
GS
, I
GS
= - 4.5 V, I
= - 4.5 V, R
D
= 0 V, T
GS
= "12 V
D
D
= - 250 mA
D
GS
GS
L
L
= - 3.5 A
= - 3.5 A
= - 2.7 A
= - 4.5 V
= 10 W
= 10 W
= 0 V
= 0 V
J
D
30
24
18
12
= 55_C
G
6
0
= - 3.5 A
0.0
= 6 W
0.5
V
GS
1.0
Transfer Characteristics
- Gate-to-Source Voltage (V)
Min
- 0.6
- 30
1.5
T
2.0
C
0.037
0.062
Typ
- 0.72
12.5
1.9
3.2
= - 55_C
10
20
26
48
30
30
S-20220—Rev. D, 01-Apr-02
Document Number: 71812
2.5
"100
Max
0.050
0.085
3.0
- 1.4
- 1.2
- 25
20
30
40
75
45
50
- 1
25_C
125_C
3.5
Unit
nA
mA
mA
nC
ns
V
A
W
W
S
V
4.0

Related parts for SI6963DQ-T1