SI6963DQ-T1 Vishay, SI6963DQ-T1 Datasheet
SI6963DQ-T1
Specifications of SI6963DQ-T1
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SI6963DQ-T1 Summary of contents
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... UNLESS OTHERWISE NOTED) A Symbol 25_C 70_C 25_C 70_C Symbol sec R R thJA Steady State Steady State R thJF Si6963DQ Vishay Siliconix P-Channel MOSFET 10 sec Steady State - 20 "12 - 3.0 - 3.5 - 2 1.25 - 0.7 1.14 0. 0.73 0. 150 stg Typical Maximum 86 110 124 150 52 165 Unit ...
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... Si6963DQ Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...
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... S-20220—Rev. D, 01-Apr-02 New Product 2000 1600 1200 800 400 24 30 1.6 1.4 1.2 1.0 0.8 0 0.20 0.16 0.12 0. 25_C J 0.04 0.00 1.0 1.2 1.4 Si6963DQ Vishay Siliconix Capacitance C iss C oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 100 ...
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... Si6963DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 = 250 0.2 0.0 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...