SI1031R-T1 Vishay, SI1031R-T1 Datasheet - Page 3

• Manufacturer Part Number: SI1031R-T1
• Description: MOSFET Small Signal 20V 0.15A
• Manufacturer: Vishay

Specifications of SI1031R-T1

• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 8 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: - 150 mA
• Power Dissipation: 280 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-75A
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Document Number: 71171
S-31507—Rev. B, 14-Jul-03
TYPICAL CHARACTERISTICS (T
1000
25
20
15
10
100
5
0
10
5
4
3
2
1
0
1
0
0.0
0.0
V
I
D
0.2
DS
Source-Drain Diode Forward Voltage
0.2
= 150 mA
V
On-Resistance vs. Drain Current
GS
200
= 10 V
T
J
V
= 2.5 V
= 25_C
0.4
SD
Q
V
0.4
g
T
GS
I
D
- Source-to-Drain Voltage (V)
J
- Total Gate Charge (nC)
= 125_C
= 1.8 V
- Drain Current (mA)
400
0.6
Gate Charge
0.6
0.8
0.8
600
T
1.0
J
= -55_C
V
GS
1.0
1.2
= 4.5 V
800
A
1.2
= 25_C UNLESS NOTED)
1.4
1000
1.6
1.4
New Product
120
100
1.6
1.4
1.2
1.0
0.8
0.6
50
40
30
20
10
80
60
40
20
0
0
-50
0
0
On-Resistance vs. Gate-to-Source Voltage
I
D
C
On-Resistance vs. Junction Temperature
rss
= 125 mA
V
f = 1 MHz
-25
GS
1
4
= 0 V
T
V
V
C
J
DS
GS
oss
0
- Junction Temperature (_C)
C
iss
- Gate-to-Source Voltage (V)
2
- Drain-to-Source Voltage (V)
I
Capacitance
D
8
= 150 mA
25
Vishay Siliconix
3
V
I
D
GS
= 150 mA
50
= 4.5 V
12
Si1031R/X
4
V
I
D
75
GS
= 125 mA
= 1.8 V
16
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5
100
125
20
6
3