SI1031R-T1-E3 Vishay, SI1031R-T1-E3 Datasheet

MOSFET P-CH 20V 140MA SC-75A

SI1031R-T1-E3

Manufacturer Part Number
SI1031R-T1-E3
Description
MOSFET P-CH 20V 140MA SC-75A
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets

Specifications of SI1031R-T1-E3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 Ohm @ 150mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
140mA
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
1.5nC @ 4.5V
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416, EMT3, 3-SSMini
Transistor Polarity
P Channel
Continuous Drain Current Id
-150mA
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
15ohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-1.2V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI1031R-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1031R-T1-E3
Manufacturer:
VISHAY
Quantity:
56 000
Part Number:
SI1031R-T1-E3
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
SI1031R-T1-E3
Quantity:
70 000
Notes:
a. Surface mounted on FR4 board.
Document Number: 71171
S10-2544-Rev. D, 08-Nov-10
Ordering Information:
Si1031R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free)
Si1031X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
G
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
S
V
DS
- 20
1
2
SC-75A or SC-89
(V)
Top View
12 at V
15 at V
20 at V
8 at V
a
3
R
DS(on)
GS
GS
GS
GS
D
J
a
= - 4.5 V
= 150 °C)
= - 2.5 V
= - 1.8 V
= - 1.5 V
()
SC-75A (SOT - 416): Si1031R
SC-89 (SOT - 490): Si1031X
P-Channel 20 V (D-S) MOSFET
Marking Code: H
a
T
T
T
T
a
A
A
A
A
= 25 °C
= 85 °C
= 25 °C
= 85 °C
I
D
A
- 150
- 125
- 100
- 30
(mA)
= 25 °C, unless otherwise noted)
Symbol
T
J
ESD
V
V
I
P
, T
DM
I
I
DS
GS
D
S
D
stg
FEATURES
APPLICATIONS
BENEFITS
• Halogen-free According to IEC 61249-2-21
• High-Side Switching
• Low On-Resistance: 8 
• Low Threshold: 0.9 V (typ.)
• Fast Switching Speed: 45 ns
• TrenchFET
• ESD Protected: 2000 V
• Compliant to RoHS Directive 2002/95/EC
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Battery Voltage Operation
- 150
- 110
- 250
280
145
5 s
Definition
Memories
Si1031R
- 500
Steady State
®
- 140
- 100
- 200
250
130
Power MOSFETs: 1.5 V Rated
- 55 to 150
2000
- 20
± 6
- 165
- 150
- 340
340
170
5 s
Si1031X
- 600
Vishay Siliconix
Steady State
Si1031R/X
- 155
- 125
- 240
300
150
www.vishay.com
Unit
mW
mA
°C
V
V
1

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SI1031R-T1-E3 Summary of contents

Page 1

... G 1 SC-75A (SOT - 416): Si1031R SC-89 (SOT - 490): Si1031X Marking Code: H Top View Ordering Information: Si1031R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free) Si1031X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 ° Pulsed Drain Current ...

Page 2

... Si1031R/X Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) A Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Surge-Drain Diode Forward Voltage Document Number: 71171 S10-2544-Rev. D, 08-Nov- °C, unless otherwise noted 2 4 800 1000 1.0 1.2 1.4 1 °C J 1.0 1.2 1 Si1031R/X Vishay Siliconix 120 MHz 100 C iss oss 20 C rss Drain-to-Source Voltage (V) DS Capacitance 1 150 mA D 1.2 ...

Page 4

... Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A, Si1031R Only) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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