SI6459DQ-T1 Vishay, SI6459DQ-T1 Datasheet - Page 4

• Manufacturer Part Number: SI6459DQ-T1
• Description: MOSFET Small Signal 60V 2.6A 1.5W
• Manufacturer: Vishay

Specifications of SI6459DQ-T1

• Configuration: Single Triple Drain Quad Source
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.6 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSSOP-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Si6459DQ
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-4
0.01
–0.25
0.1
0.75
0.50
0.25
0.00
2
1
20
10
1
10
0.00
–50
–4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
–25
Source-Drain Diode Forward Voltage
0.25
V
SD
0
T
– Source-to-Drain Voltage (V)
J
Threshold Voltage
T
0.50
= 150 C
Single Pulse
J
25
I
D
– Temperature ( C)
= 250 A
10
50
–3
0.75
75
Normalized Thermal Transient Impedance, Junction-to-Ambient
1.00
100
T
J
= 25 C
125
1.25
150
10
–2
Square Wave Pulse Duration (sec)
1.50
175
10
–1
50
40
30
20
10
0.5
0.4
0.3
0.2
0.1
0
0.01
0
2
On-Resistance vs. Gate-to-Source Voltage
Single Pulse
T
V
C
GS
1
= 25 C
0.1
4
I
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
D
– Gate-to-Source Voltage (V)
Single Pulse Power
P
DM
=
JM
– T
Time (sec)
t
1
A
A
= P
t
2
DM
6
Z
S-99446—Rev. D, 29-Nov-99
1
thJA
thJA
t
t
Document Number: 70186
1
2
(t)
= 83 C/W
10
8
10
30
30
10