SI6459DQ-T1 Vishay, SI6459DQ-T1 Datasheet - Page 3

• Manufacturer Part Number: SI6459DQ-T1
• Description: MOSFET Small Signal 60V 2.6A 1.5W
• Manufacturer: Vishay

Specifications of SI6459DQ-T1

• Configuration: Single Triple Drain Quad Source
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.6 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSSOP-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Document Number: 70186
S-99446—Rev. D, 29-Nov-99
1.0
0.8
0.6
0.4
0.2
30
24
18
12
10
6
0
0
8
6
4
2
0
0
0
0
V
I
D
DS
= 2.6 A
= 30 V
On-Resistance vs. Drain Current
1
V
GS
V
4
4
DS
Q
= 10 thru 6 V
Output Characteristics
g
– Drain-to-Source Voltage (V)
I
D
– Total Gate Charge (nC)
2
– Drain Current (A)
Gate Charge
8
8
V
GS
3
= 4.5 V
12
12
4
V
GS
16
16
5
= 10 V
5 V
4 V
3 V
20
20
6
1400
1200
1000
1.85
1.60
1.35
1.10
0.85
0.60
800
600
400
200
20
16
12
8
4
0
0
–50
0
0
On-Resistance vs. Junction Temperature
C
rss
–25
V
I
D
GS
10
= 2.6 A
V
V
C
= 10 V
DS
GS
T
oss
Transfer Characteristics
J
2
0
– Junction Temperature ( C)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
T
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C
20
= –55 C
Capacitance
25
Vishay Siliconix
C
30
50
4
iss
75
Si6459DQ
125 C
40
100
6
25 C
50
125
150
60
8
2-3